Title: | Gapless band structure of PbPdO2: A combined first principles calculation and experimental study |
Authors: | 郭光宇 Chen, S. W.;Huang, S. C.;Guo, G. Y.;Lee, . M.;Chiang, S.;Chen, W. C.;Liang, Y. C.;Lu, K. T.;Chen, J. M. |
Contributors: | 應物所 |
Date: | 2011.07 |
Issue Date: | 2014-04-28 17:42:23 (UTC+8) |
Abstract: | We present experimental evidence of the gapless band structure of PbPdO2 by combined x-ray photoemission and x-ray absorption spectra complemented with first principles band structure calculations. The electronic structure near the Fermi level of PbPdO2 is mainly composed of O 2p and Pd 4d bands, constructing the conduction path along the Pd-O layer in PbPdO2. Pd deficiency in PbPdO2 causes decreased O 2p-Pd 4d and increased O 2p-Pb 6p hybridizations, thereby inducing a small band gap and hence reducing conductivity. Hall measurements indicate that PbPdO2 is a p-type gapless semiconductor with intrinsic hole carriers transporting in the Pd-O layers. |
Relation: | Applied Physics Letters, 99, 012103 |
Data Type: | article |
DOI 連結: | http://dx.doi.org/10.1063/1.3607293 |
Appears in Collections: | [應用物理研究所 ] 期刊論文
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