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題名: | Gapless band structure of PbPdO2: A combined first principles calculation and experimental study | 作者: | 郭光宇 Chen, S. W. ; Huang, S. C. ; Guo, G. Y. ; Lee, . M. ; Chiang, S. ; Chen, W. C. ; Liang, Y. C. ; Lu, K. T. ; Chen, J. M. |
貢獻者: | 應物所 | 日期: | 2011 | 上傳時間: | 28-Apr-2014 | 摘要: | We present experimental evidence of the gapless band structure of PbPdO2 by combined x-ray photoemission and x-ray absorption spectra complemented with first principles band structure calculations. The electronic structure near the Fermi level of PbPdO2 is mainly composed of O 2p and Pd 4d bands, constructing the conduction path along the Pd-O layer in PbPdO2. Pd deficiency in PbPdO2 causes decreased O 2p-Pd 4d and increased O 2p-Pb 6p hybridizations, thereby inducing a small band gap and hence reducing conductivity. Hall measurements indicate that PbPdO2 is a p-type gapless semiconductor with intrinsic hole carriers transporting in the Pd-O layers. | 關聯: | Applied Physics Letters, 99, 012103 | 資料類型: | article | DOI: | http://dx.doi.org/10.1063/1.3607293 |
Appears in Collections: | 期刊論文 |
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