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Title: Gapless band structure of PbPdO2: A combined first principles calculation and experimental study
Authors: 郭光宇
Chen, S. W.;Huang, S. C.;Guo, G. Y.;Lee, . M.;Chiang, S.;Chen, W. C.;Liang, Y. C.;Lu, K. T.;Chen, J. M.
Contributors: 應物所
Date: 2011.07
Issue Date: 2014-04-28 17:42:23 (UTC+8)
Abstract: We present experimental evidence of the gapless band structure of PbPdO2 by combined x-ray photoemission and x-ray absorption spectra complemented with first principles band structure calculations. The electronic structure near the Fermi level of PbPdO2 is mainly composed of O 2p and Pd 4d bands, constructing the conduction path along the Pd-O layer in PbPdO2. Pd deficiency in PbPdO2 causes decreased O 2p-Pd 4d and increased O 2p-Pb 6p hybridizations, thereby inducing a small band gap and hence reducing conductivity. Hall measurements indicate that PbPdO2 is a p-type gapless semiconductor with intrinsic hole carriers transporting in the Pd-O layers.
Relation: Applied Physics Letters, 99, 012103
Data Type: article
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Appears in Collections:[應用物理研究所 ] 期刊論文

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