Please use this identifier to cite or link to this item: https://ah.nccu.edu.tw/handle/140.119/70496


Title: Demonstration of edge roughness effect on the magnetization reversal of spin valve submicron wires
Authors: 李尚凡
Hung,H.Y.;Huang,S.Y.;Chang,P.;Lin,W.C.;Liu,Y.C.;Lee,S.F.;Hong,M.;Kwo,J.
Contributors: 應物所
Keywords: A1. Anisotropic magnetoresistance;A2. Single crystal growth;A3. Molecular beam epitaxy;B2. Fe3Si;B2. GaAs;B2. Spintronics
Date: 2011
Issue Date: 2014-10-09 15:49:17 (UTC+8)
Abstract: This work reports the magneto-anisotropy property of epitaxial Fe3Si film grown on GaAs (0 0 1) substrate by molecular beam epitaxy (MBE). We present a strong dependence of anisotropic magnetoresistance (MR) on field in the Fe3Si film plane. The electron transport behavior is highly dependent on the direction of the current either parallel or perpendicular to the magnetic easy axis. By altering the direction of current from magnetic hard axis to magnetic easy axis, the unconventional behavior switches to normal anisotropic magnetoresistance (AMR). In addition, the anisotropic behaviors were also observed from the magneto-optic Kerr effect (MOKE) measurement, which demonstrates unusual anisotropic properties with the crystalline anisotropic constant K1¼(3.870.2) 104 erg/cm3 and uni-axial anisotropy Ku¼(1.270.04) 104 erg/cm3. The ratio K1/Ku was used to account for the MR.
Relation: Journal of Crystal Growth,323,372–375
Data Type: article
Appears in Collections:[應用物理研究所 ] 期刊論文

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