1. NCCU Academic Hub
  2. 學術產出
  3. 理學院
  4. 期刊論文
  5. Item

學術產出-期刊論文

文章檢視/開啟

書目匯出

Google ScholarTM

政大圖書館

引文資訊

TAIR相關學術產出

題名 Organic Solid-State Electrolyte Synaptic Transistors with Photoinduced Thiol–Ene Cross-linked Polymer Electrolytes for Deep Neural Networks
作者 張葶葶
Chang, Ting-Ting;Chen, Qun-Gao;Liao, Wei-Ting;Li, Rou-Yi;Sanjuán, Ignacio;Hsiao, Ning-Cian;Ng, Chan-Tat;Guerrero, Antonio;Chueh, Chu-Chen;Lee, Wen-Ya
貢獻者 心理系
日期 2025-01
上傳時間 13-十一月-2025 10:59:03 (UTC+8)
摘要 In this work, we describe a solid-state polymer electrolyte (SPE)-based electrolyte-gated organic field-effect transistors (EGOFETs) consisting of a thiol–ene-assisted photo-cross-linked nitrile butadiene rubber (NBR) network embedded with lithium bis(trifluoromethanesulfonyl)imide (LiTFSI) electrolyte. The photocurable SPE film can be patterned with different dimensions by photolithography and exhibits excellent electronic properties and crucial synaptic behavior. The photocurable NBR/LiTFSI EGOFET exhibits a high transconductance of 11.9 mS and a high on/off ratio of 105 at a scan rate of 40 mV/s. Due to the strongly polarized nature of the photo-cross-linked NBR network and Li-ion diffusion, the NBR/LiTFSI device exhibits a significant current hysteresis, enabling synaptic-like learning and memory behavior. The NBR/LiTFSI device demonstrates a DNN of 91.9% handwritten digit recognition accuracy. This work demonstrates the potential of the solid-state NBR/LiTFSI EGOFET in creating highly efficient and low-energy neuromorphic devices.
關聯 ACS Materials Letters, Vol.7, No.2, pp.682-691
資料類型 article
DOI https://doi.org/10.1021/acsmaterialslett.4c02511
dc.contributor 心理系
dc.creator (作者) 張葶葶
dc.creator (作者) Chang, Ting-Ting;Chen, Qun-Gao;Liao, Wei-Ting;Li, Rou-Yi;Sanjuán, Ignacio;Hsiao, Ning-Cian;Ng, Chan-Tat;Guerrero, Antonio;Chueh, Chu-Chen;Lee, Wen-Ya
dc.date (日期) 2025-01
dc.date.accessioned 13-十一月-2025 10:59:03 (UTC+8)-
dc.date.available 13-十一月-2025 10:59:03 (UTC+8)-
dc.date.issued (上傳時間) 13-十一月-2025 10:59:03 (UTC+8)-
dc.identifier.uri (URI) https://ah.lib.nccu.edu.tw/item?item_id=179753-
dc.description.abstract (摘要) In this work, we describe a solid-state polymer electrolyte (SPE)-based electrolyte-gated organic field-effect transistors (EGOFETs) consisting of a thiol–ene-assisted photo-cross-linked nitrile butadiene rubber (NBR) network embedded with lithium bis(trifluoromethanesulfonyl)imide (LiTFSI) electrolyte. The photocurable SPE film can be patterned with different dimensions by photolithography and exhibits excellent electronic properties and crucial synaptic behavior. The photocurable NBR/LiTFSI EGOFET exhibits a high transconductance of 11.9 mS and a high on/off ratio of 105 at a scan rate of 40 mV/s. Due to the strongly polarized nature of the photo-cross-linked NBR network and Li-ion diffusion, the NBR/LiTFSI device exhibits a significant current hysteresis, enabling synaptic-like learning and memory behavior. The NBR/LiTFSI device demonstrates a DNN of 91.9% handwritten digit recognition accuracy. This work demonstrates the potential of the solid-state NBR/LiTFSI EGOFET in creating highly efficient and low-energy neuromorphic devices.
dc.format.extent 112 bytes-
dc.format.mimetype text/html-
dc.relation (關聯) ACS Materials Letters, Vol.7, No.2, pp.682-691
dc.title (題名) Organic Solid-State Electrolyte Synaptic Transistors with Photoinduced Thiol–Ene Cross-linked Polymer Electrolytes for Deep Neural Networks
dc.type (資料類型) article
dc.identifier.doi (DOI) 10.1021/acsmaterialslett.4c02511
dc.doi.uri (DOI) https://doi.org/10.1021/acsmaterialslett.4c02511