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題名 鉍-銻-碲奈米線之合成、量測與熱電性質
Synthesis, measurements and thermoelectric properties of BixSb2-xTe3-y nanowires作者 董光平
Dong, Guang Ping貢獻者 陳洋元
Chen, Yang Yuan
董光平
Dong, Guang Ping關鍵詞 奈米線
熱電
鉍-銻-碲
nanowire
thermoelectric
Bi-Sb-Te日期 2011 上傳時間 30-十月-2012 11:08:02 (UTC+8) 摘要 諸多的研究顯示，和塊材相比，低維度的材料其物理性質會有所不同，為了探究熱電材料在低維度下對其熱電性質所造成的效應，我們合成了BixSb2-xTe3-y奈米線並量測其熱電性質。本實驗藉由熱處理薄膜製備奈米線的方法合成單晶BixSb2-x Te3-y奈米線。我們先利用脈衝雷射沉積系統將BixSb2-x Te3鍍在矽基板上形成薄膜，再將薄膜以350 ℃至490 ℃熱處理5到21天，奈米線即為了平衡因薄膜與矽基板彼此熱膨脹係數不同所造成的應力而自薄膜上長出，其直徑為幾十奈米至幾百奈米不等，長度則為幾微米至幾十微米。為了瞭解奈米線之構成與量測其熱電性質，我們結合微影製程及操縱技術，將單根奈米線架空於附有電極、加熱元件及溫度感測元件之量測平台上，由於奈米線已被架空，我們便能透過選區繞射分析奈米線其結晶性，並使用能量散射分析儀得知奈米線之成分，利用四點量測可得知奈米線的電阻率ρ，以加熱元件在奈米線兩端產生溫差，並量測因西貝克效應 (Seebeck effect) 所造成之電壓差即能得到西貝克係數 S (Seebeck coefficient)，三倍頻技術要求所量測的樣品必須要架空於基板上，運用三倍頻技術 (3ω method) 可量測奈米線之熱導率κ及比熱。結合微影製程、操縱技術以及量測系統，我們成功得到單根奈米線的三個熱電係數ρ、S以及κ，並了解低維度對熱電性質所造成的影響。
Compare with the bulk materials, many researches had revealed that physical properties were different in low dimensional materials. To study the low-dimensional effects on thermoelectric properties of thermoelectric materials, BixSb2-xTe3-y nanowires were synthesized and studied for their thermoelectric properties. Single-crystallized BixSb2-xTe3-y nanowires were synthesized by on-film formation of nanowires. First, BixSb2-xTe3 thin films were deposited on SiO2/Si substrates by using the pulsed laser deposition system. BixSb2-xTe3-y nanowires grew from the films by annealing the films at 350~490 ℃ for 5~21 days through the stress release of the thermal expansion mismatch between the film and the substrate. A series of BixSb2-xTe3-y nanowires were prepared with the diameter from few tens of nanometers to few hundreds of nanometers and the length from few micrometers to few tens of micrometers. In order to analyze the components and measure the thermoelectric properties of the nanowires, the technique of combining microfabrication and manipulation for suspending a single BixSb2-xTe3-y nanowire on a measurement platform with electrodes, heater and thermometers was developed. As long as the wire is suspended, the crystallization of the nanowire is able to be analyzed by the selected area electron diffraction (SAED). The composition of the nanowire can be analyzed by the STEM-EDX. Resistivity ρ is measured by the four-point probe method. In order to get the Seebeck coefficient S, temperature difference were generated by the heater and thermoelectric voltage generated by Seebeck effect were measured. The 3ω method which demands that the wire should be suspended was applied to measure the thermal conductivity κ and specific heat c. By using the developed technique and the measurement system, three thermoelectric parameter ρ, S, κ of a single nanowire were successfully measured and the low-dimensional effect on thermoelectric properties were examined.參考文獻 [1] L. Weber and E. Gmelin, Transport properties of silicon, Appl. Phys. A 53, 136–140 (1991).[2] Allon I. Hochbaum, Renkun Chen, Raul Diaz Delgado, Wenjie Liang, Erik C. Garnett, Mark Najarian, Arun Majumdar& Peidong Yang, Enhanced thermoelectric performance of rough silicon nanowires, Nature 451, 163–167 (2008)[3] Cheng-Lung Chen, Yang-Yuan Chen, Su-Jien Lin, James C. Ho, Ping-Chung Lee, Chii-Dong Chen and Sergey R. Harutyunyan, Fabrication and Characterization of Electrodeposited Bismuth Telluride Films and Nanowires, J. Phys. Chem. C 114, 3385–3389 (2010)[4] Jinhee Ham, Wooyoung Shim, Do Hyun Kim, Seunghyun Lee, Jongwook Roh, Sung Woo Sohn, Kyu Hwan Oh, Peter W. Voorhees and Wooyoung Lee, Direct Growth of Compound Semiconductor Nanowires by On-Film Formation of Nanowires: Bismuth Telluride, Nano Lett. Vol. 9 No.8, 2867-2872 (2009)[5] Pollock and Daniel D., Thermoelectricity: Theory, Thermometry, Tool. ASTM International (1985)[6] D.M.Rowe, Ph.D., D.Sc., Thermoelectrics handbook, Taylor & Francis Group, (2006)[7] Zheng Cui, Nanofabrication: Principles, Capabilities and Limits, Springer (2008)[8] L. Lu, W. Yi, and D. L. Zhang, 3 omega method for specific heat and thermal conductivity measurements, Rev. Sci. Instrum. Vol. 72, No. 7, (2001) 描述 碩士
國立政治大學
應用物理研究所
99755011
100資料來源 http://thesis.lib.nccu.edu.tw/record/#G0997550111 資料類型 thesis dc.contributor.advisor 陳洋元 zh_TW dc.contributor.advisor Chen, Yang Yuan en_US dc.contributor.author (作者) 董光平 zh_TW dc.contributor.author (作者) Dong, Guang Ping en_US dc.creator (作者) 董光平 zh_TW dc.creator (作者) Dong, Guang Ping en_US dc.date (日期) 2011 en_US dc.date.accessioned 30-十月-2012 11:08:02 (UTC+8) - dc.date.available 30-十月-2012 11:08:02 (UTC+8) - dc.date.issued (上傳時間) 30-十月-2012 11:08:02 (UTC+8) - dc.identifier (其他 識別碼) G0997550111 en_US dc.identifier.uri (URI) http://nccur.lib.nccu.edu.tw/handle/140.119/54466 - dc.description (描述) 碩士 zh_TW dc.description (描述) 國立政治大學 zh_TW dc.description (描述) 應用物理研究所 zh_TW dc.description (描述) 99755011 zh_TW dc.description (描述) 100 zh_TW dc.description.abstract (摘要) 諸多的研究顯示，和塊材相比，低維度的材料其物理性質會有所不同，為了探究熱電材料在低維度下對其熱電性質所造成的效應，我們合成了BixSb2-xTe3-y奈米線並量測其熱電性質。本實驗藉由熱處理薄膜製備奈米線的方法合成單晶BixSb2-x Te3-y奈米線。我們先利用脈衝雷射沉積系統將BixSb2-x Te3鍍在矽基板上形成薄膜，再將薄膜以350 ℃至490 ℃熱處理5到21天，奈米線即為了平衡因薄膜與矽基板彼此熱膨脹係數不同所造成的應力而自薄膜上長出，其直徑為幾十奈米至幾百奈米不等，長度則為幾微米至幾十微米。為了瞭解奈米線之構成與量測其熱電性質，我們結合微影製程及操縱技術，將單根奈米線架空於附有電極、加熱元件及溫度感測元件之量測平台上，由於奈米線已被架空，我們便能透過選區繞射分析奈米線其結晶性，並使用能量散射分析儀得知奈米線之成分，利用四點量測可得知奈米線的電阻率ρ，以加熱元件在奈米線兩端產生溫差，並量測因西貝克效應 (Seebeck effect) 所造成之電壓差即能得到西貝克係數 S (Seebeck coefficient)，三倍頻技術要求所量測的樣品必須要架空於基板上，運用三倍頻技術 (3ω method) 可量測奈米線之熱導率κ及比熱。結合微影製程、操縱技術以及量測系統，我們成功得到單根奈米線的三個熱電係數ρ、S以及κ，並了解低維度對熱電性質所造成的影響。 zh_TW dc.description.abstract (摘要) Compare with the bulk materials, many researches had revealed that physical properties were different in low dimensional materials. To study the low-dimensional effects on thermoelectric properties of thermoelectric materials, BixSb2-xTe3-y nanowires were synthesized and studied for their thermoelectric properties. Single-crystallized BixSb2-xTe3-y nanowires were synthesized by on-film formation of nanowires. First, BixSb2-xTe3 thin films were deposited on SiO2/Si substrates by using the pulsed laser deposition system. BixSb2-xTe3-y nanowires grew from the films by annealing the films at 350~490 ℃ for 5~21 days through the stress release of the thermal expansion mismatch between the film and the substrate. A series of BixSb2-xTe3-y nanowires were prepared with the diameter from few tens of nanometers to few hundreds of nanometers and the length from few micrometers to few tens of micrometers. In order to analyze the components and measure the thermoelectric properties of the nanowires, the technique of combining microfabrication and manipulation for suspending a single BixSb2-xTe3-y nanowire on a measurement platform with electrodes, heater and thermometers was developed. As long as the wire is suspended, the crystallization of the nanowire is able to be analyzed by the selected area electron diffraction (SAED). The composition of the nanowire can be analyzed by the STEM-EDX. Resistivity ρ is measured by the four-point probe method. In order to get the Seebeck coefficient S, temperature difference were generated by the heater and thermoelectric voltage generated by Seebeck effect were measured. The 3ω method which demands that the wire should be suspended was applied to measure the thermal conductivity κ and specific heat c. By using the developed technique and the measurement system, three thermoelectric parameter ρ, S, κ of a single nanowire were successfully measured and the low-dimensional effect on thermoelectric properties were examined. en_US dc.description.tableofcontents 摘要 iAbstract ii致謝 iiiTable of contents ivList of figures viList of tables xiiChapter 1 Introduction 1Chapter 2 Thermoelectric material 22.1 Thermoelectric effect 22.2 Figure of merit 5Chapter 3 Synthesis of nanowires 73.1 Experimental equipment and techniques 83.2 Target preparation 113.3 Film deposition 143.4 Annealing process 173.5 Analysis results 20Chapter 4 Thermoelectric property measurements of nanowires 284.1 Experimental equipment and techniques 284.2 Primary measurement platform fabrication 344.2 Nanowires suspension and completion of measurement platform 344.4 Thermoelectric property measurements of nanowires 414.4.1 Resistivity measurement 414.4.2 Seebeck measurement 414.4.3 Thermal conductivity measurement 424.4.4 Pattern design 434.5 Measurement results 45Chapter 5 Conclusions 50References 51 zh_TW dc.language.iso en_US - dc.source.uri (資料來源) http://thesis.lib.nccu.edu.tw/record/#G0997550111 en_US dc.subject (關鍵詞) 奈米線 zh_TW dc.subject (關鍵詞) 熱電 zh_TW dc.subject (關鍵詞) 鉍-銻-碲 zh_TW dc.subject (關鍵詞) nanowire en_US dc.subject (關鍵詞) thermoelectric en_US dc.subject (關鍵詞) Bi-Sb-Te en_US dc.title (題名) 鉍-銻-碲奈米線之合成、量測與熱電性質 zh_TW dc.title (題名) Synthesis, measurements and thermoelectric properties of BixSb2-xTe3-y nanowires en_US dc.type (資料類型) thesis en dc.relation.reference (參考文獻) [1] L. Weber and E. Gmelin, Transport properties of silicon, Appl. Phys. A 53, 136–140 (1991).[2] Allon I. Hochbaum, Renkun Chen, Raul Diaz Delgado, Wenjie Liang, Erik C. Garnett, Mark Najarian, Arun Majumdar& Peidong Yang, Enhanced thermoelectric performance of rough silicon nanowires, Nature 451, 163–167 (2008)[3] Cheng-Lung Chen, Yang-Yuan Chen, Su-Jien Lin, James C. Ho, Ping-Chung Lee, Chii-Dong Chen and Sergey R. Harutyunyan, Fabrication and Characterization of Electrodeposited Bismuth Telluride Films and Nanowires, J. Phys. Chem. C 114, 3385–3389 (2010)[4] Jinhee Ham, Wooyoung Shim, Do Hyun Kim, Seunghyun Lee, Jongwook Roh, Sung Woo Sohn, Kyu Hwan Oh, Peter W. Voorhees and Wooyoung Lee, Direct Growth of Compound Semiconductor Nanowires by On-Film Formation of Nanowires: Bismuth Telluride, Nano Lett. Vol. 9 No.8, 2867-2872 (2009)[5] Pollock and Daniel D., Thermoelectricity: Theory, Thermometry, Tool. ASTM International (1985)[6] D.M.Rowe, Ph.D., D.Sc., Thermoelectrics handbook, Taylor & Francis Group, (2006)[7] Zheng Cui, Nanofabrication: Principles, Capabilities and Limits, Springer (2008)[8] L. Lu, W. Yi, and D. L. Zhang, 3 omega method for specific heat and thermal conductivity measurements, Rev. Sci. Instrum. Vol. 72, No. 7, (2001) zh_TW
