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題名 Topological surface states revealed by Sb thin films adsorbed with impurity atoms
作者 楊志開
Lee, Chi-Hsuan ;Yang, Chih-Kai
貢獻者 應物所
日期 2013-03
上傳時間 27-十一月-2013 16:08:41 (UTC+8)
摘要 The prevalent concept is that a topological insulator is made of thick layers of atoms so that its surfaces, where electrical conduction occurs, can be distinguished from the insulating bulk of the interior. One important reason is that the thin film topological insulator may cause the opening of energy band gaps by quantum tunneling between the two surfaces. Inspired by an experiment on antimony thin films, we use density functional calculations to investigate the electronic structure of the four-bilayer Sb film and find that adsorptions of nonmagnetic impurity atoms of hydrogen and 3d transition-metal atoms on the film all close the energy gap of the free-standing film and facilitate the formation of Dirac cones that preserve time-reversal symmetry. However, magnetic atoms of the 3d transition metals do just the opposite. The results suggest the counterintuitive concept of achieving topological conduction by doping nonmagnetic impurity atoms on thin films of topological insulators.
關聯 Physical Review B, 87(11),115306-1-115306-7
資料類型 article
DOI http://dx.doi.org/10.1103/PhysRevB.87.115306
dc.contributor 應物所en_US
dc.creator (作者) 楊志開zh_TW
dc.creator (作者) Lee, Chi-Hsuan ;Yang, Chih-Kaien_US
dc.date (日期) 2013-03en_US
dc.date.accessioned 27-十一月-2013 16:08:41 (UTC+8)-
dc.date.available 27-十一月-2013 16:08:41 (UTC+8)-
dc.date.issued (上傳時間) 27-十一月-2013 16:08:41 (UTC+8)-
dc.identifier.uri (URI) http://nccur.lib.nccu.edu.tw/handle/140.119/61886-
dc.description.abstract (摘要) The prevalent concept is that a topological insulator is made of thick layers of atoms so that its surfaces, where electrical conduction occurs, can be distinguished from the insulating bulk of the interior. One important reason is that the thin film topological insulator may cause the opening of energy band gaps by quantum tunneling between the two surfaces. Inspired by an experiment on antimony thin films, we use density functional calculations to investigate the electronic structure of the four-bilayer Sb film and find that adsorptions of nonmagnetic impurity atoms of hydrogen and 3d transition-metal atoms on the film all close the energy gap of the free-standing film and facilitate the formation of Dirac cones that preserve time-reversal symmetry. However, magnetic atoms of the 3d transition metals do just the opposite. The results suggest the counterintuitive concept of achieving topological conduction by doping nonmagnetic impurity atoms on thin films of topological insulators.-
dc.format.extent 5543038 bytes-
dc.format.mimetype application/pdf-
dc.language.iso en_US-
dc.relation (關聯) Physical Review B, 87(11),115306-1-115306-7en_US
dc.title (題名) Topological surface states revealed by Sb thin films adsorbed with impurity atomsen_US
dc.type (資料類型) articleen
dc.identifier.doi (DOI) 10.1103/PhysRevB.87.115306en_US
dc.doi.uri (DOI) http://dx.doi.org/10.1103/PhysRevB.87.115306en_US