| dc.contributor | 應物所 | en_US |
| dc.creator (作者) | Lee, Jung-Chuan ; Huang, Leng-Wei ; Hung, Dung-Shing ; Chiang, Tung-Han ; Huang, J. C. A. ; Liang, Jun-Zhi ; Lee, Shang-Fan | en_US |
| dc.creator (作者) | 李尚凡 | zh_TW |
| dc.date (日期) | 2014.02 | en_US |
| dc.date.accessioned | 5-三月-2014 17:53:30 (UTC+8) | - |
| dc.date.available | 5-三月-2014 17:53:30 (UTC+8) | - |
| dc.date.issued (上傳時間) | 5-三月-2014 17:53:30 (UTC+8) | - |
| dc.identifier.uri (URI) | http://nccur.lib.nccu.edu.tw/handle/140.119/64469 | - |
| dc.description.abstract (摘要) | The inverse spin Hall effect (ISHE) of n-type semiconductor ZnO thin films with weak spin-orbit coupling has been observed by utilizing the spin pumping method. In the ferromagnetic resonance condition, the spin pumping driven by the dynamical exchange interaction of a permalloy film injects a pure spin current into the adjacent ZnO layer. This spin current gives rise to a DC voltage through the ISHE in the ZnO layer, and the DC voltage is proportional to the microwave excitation power. The effect is sizeable even when the spin backflow is considered. | en_US |
| dc.format.extent | 889756 bytes | - |
| dc.format.mimetype | application/pdf | - |
| dc.language.iso | en_US | - |
| dc.relation (關聯) | Applied Physics Letters, 104(5), 052401 | en_US |
| dc.source.uri (資料來源) | http://dx.doi.org/10.1063/1.4863750 | en_US |
| dc.title (題名) | Inverse spin Hall effect induced by spin pumping into semiconducting ZnO | en_US |
| dc.type (資料類型) | article | en |
| dc.identifier.doi (DOI) | 10.1063/1.4863750 | en_US |
| dc.doi.uri (DOI) | http://dx.doi.org/10.1063/1.4863750 | en_US |
