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題名 Magnetization reversal processes of epitaxial Fe3Si films on GaAs(001)
作者 李尚凡
Liu, Y.C.;Chang, P.;Huang, S.Y.;Chang, L.J.;Lin, W.C. ; Lee, S.F. ; Hong, M. ; Kwo, J.
貢獻者 應物所
日期 2011-04
上傳時間 9-十月-2014 15:51:16 (UTC+8)
摘要 We report magneto-optical Kerr microscopy study of the magnetic reversal behavior of Fe3Si/GaAs(100) epitaxial thin films grown by molecular beam epitaxy. Results are described in the context of superconducting quantum interference device and Kerr effect vector magnetometry to study the magnetic switching behavior. By tuning the Fe concentration of the samples from 75% to 83%, we found that the ratio of uniaxial to cubic anisotropy constants γ (= |Ku/K1|) would tremendously vary from 0.06 to 0.3. When the field was applied along the easy axis of Fe3Si samples, a step feature was observed in the M-H loops. This feature has been resolved in the domain image by Kerr microscopy, in which we observed a two-switching behavior at the field where the step feature occurred. These can be qualitatively understood by considering the ratio γ.
關聯 Journal of Applied Physics,109(7),07D508
資料類型 article
DOI http://dx.doi.org/10.1063/1.3556785
dc.contributor 應物所en_US
dc.creator (作者) 李尚凡zh_TW
dc.creator (作者) Liu, Y.C.;Chang, P.;Huang, S.Y.;Chang, L.J.;Lin, W.C. ; Lee, S.F. ; Hong, M. ; Kwo, J.en_US
dc.date (日期) 2011-04en_US
dc.date.accessioned 9-十月-2014 15:51:16 (UTC+8)-
dc.date.available 9-十月-2014 15:51:16 (UTC+8)-
dc.date.issued (上傳時間) 9-十月-2014 15:51:16 (UTC+8)-
dc.identifier.uri (URI) http://nccur.lib.nccu.edu.tw/handle/140.119/70508-
dc.description.abstract (摘要) We report magneto-optical Kerr microscopy study of the magnetic reversal behavior of Fe3Si/GaAs(100) epitaxial thin films grown by molecular beam epitaxy. Results are described in the context of superconducting quantum interference device and Kerr effect vector magnetometry to study the magnetic switching behavior. By tuning the Fe concentration of the samples from 75% to 83%, we found that the ratio of uniaxial to cubic anisotropy constants γ (= |Ku/K1|) would tremendously vary from 0.06 to 0.3. When the field was applied along the easy axis of Fe3Si samples, a step feature was observed in the M-H loops. This feature has been resolved in the domain image by Kerr microscopy, in which we observed a two-switching behavior at the field where the step feature occurred. These can be qualitatively understood by considering the ratio γ.en_US
dc.format.extent 2783634 bytes-
dc.format.mimetype application/pdf-
dc.language.iso en_US-
dc.relation (關聯) Journal of Applied Physics,109(7),07D508en_US
dc.title (題名) Magnetization reversal processes of epitaxial Fe3Si films on GaAs(001)en_US
dc.type (資料類型) articleen
dc.identifier.doi (DOI) 10.1063/1.3556785-
dc.doi.uri (DOI) http://dx.doi.org/10.1063/1.3556785-