Please use this identifier to cite or link to this item:
https://ah.lib.nccu.edu.tw/handle/140.119/65646
DC Field | Value | Language |
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dc.contributor | 應物所 | en_US |
dc.creator | 郭光宇 | zh_TW |
dc.creator | Chen, S. W. ; Huang, S. C. ; Guo, G. Y. ; Lee, . M. ; Chiang, S. ; Chen, W. C. ; Liang, Y. C. ; Lu, K. T. ; Chen, J. M. | en_US |
dc.date | 2011.07 | en_US |
dc.date.accessioned | 2014-04-28T09:42:23Z | - |
dc.date.available | 2014-04-28T09:42:23Z | - |
dc.date.issued | 2014-04-28T09:42:23Z | - |
dc.identifier.uri | http://nccur.lib.nccu.edu.tw/handle/140.119/65646 | - |
dc.description.abstract | We present experimental evidence of the gapless band structure of PbPdO2 by combined x-ray photoemission and x-ray absorption spectra complemented with first principles band structure calculations. The electronic structure near the Fermi level of PbPdO2 is mainly composed of O 2p and Pd 4d bands, constructing the conduction path along the Pd-O layer in PbPdO2. Pd deficiency in PbPdO2 causes decreased O 2p-Pd 4d and increased O 2p-Pb 6p hybridizations, thereby inducing a small band gap and hence reducing conductivity. Hall measurements indicate that PbPdO2 is a p-type gapless semiconductor with intrinsic hole carriers transporting in the Pd-O layers. | en_US |
dc.format.extent | 711174 bytes | - |
dc.format.mimetype | application/pdf | - |
dc.language.iso | en_US | - |
dc.relation | Applied Physics Letters, 99, 012103 | en_US |
dc.title | Gapless band structure of PbPdO2: A combined first principles calculation and experimental study | en_US |
dc.type | article | en |
dc.identifier.doi | 10.1063/1.3607293 | en_US |
dc.doi.uri | http://dx.doi.org/10.1063/1.3607293 | en_US |
item.cerifentitytype | Publications | - |
item.fulltext | With Fulltext | - |
item.grantfulltext | restricted | - |
item.languageiso639-1 | en_US | - |
item.openairecristype | http://purl.org/coar/resource_type/c_18cf | - |
item.openairetype | article | - |
Appears in Collections: | 期刊論文 |
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012103.pdf | 694.51 kB | Adobe PDF2 | View/Open |
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