Please use this identifier to cite or link to this item: https://ah.lib.nccu.edu.tw/handle/140.119/79086
題名: Luminescence and density functional theory (DFT) calculation of undoped nitridosilicate phosphors for light-emitting diodes
作者: Xiao, Zhi-Ren
蕭智仁
貢獻者: 應用物理研究所
關鍵詞: Blue emission; Blue excitation; Density functional theory calculations; Emission bands; Extended systems; First-principles; Gas-pressure sintering; Nitridosilicates; Orbitals; Red emissions; Si-Si bonds; UV excitation; Chemical bonds; Electronic structure; Energy gap; Light emission; Silicon; Sintering; Solids; Light emitting diodes
日期: Mar-2012
上傳時間: 28-Oct-2015
摘要: Undoped nitridosilicates that contain a Si-Si bond, SrSi 6N 8 and SrSi 6N 7.95O 0.05, were successfully synthesized by gas-pressure sintering (GPS). Both newly discovered nitridosilicates SrSi 6N 8 and SrSi 6N 7.95O 0.05 were found to exhibit a blue emission (452 nm) under UV excitation (370 nm). Additionally, SrSi 6N 7.95O 0.05 emits a red emission (652 nm) under blue excitation (460 nm). Based on density functional theory (DFT) calculations from first principles, the electronic structure of a N-vacancy caused a Si extended system in SrSi 6N 8 and SrSi 6N 7.95O 0.05. This phenomenon is predicted using the calculated 2.75 eV (452 nm) energy gap between the 3p-orbitals and the 4s-orbitals of Si, which is consistent with the main peak associated with the emission band and the O-replacement defect system (SrSi 6N 7.95O 0.05) from a separation of 1.98 eV (652 nm) for the energy gap between the 3s-orbitals and the 2p-orbitals of O. © The Royal Society of Chemistry 2012.
關聯: Journal of Materials Chemistry,22(12), 5828-5834
資料類型: article
DOI: http://dx.doi.org/10.1039/c2jm16302k
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