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題名 Enhanced thermoelectric properties of Cu3SbSe4 by germanium doping
作者 Chang, Chia-Hsiang;Chen, Cheng-Lung;Chiu, Wan-Ting;Chen, Yang-Yuan
張家祥;陳洋元
貢獻者 應用物理所
關鍵詞 Electric power factor; Phonons; Semiconducting selenium compounds; Semiconductor doping; Semiconductor materials; Sintering; Spark plasma sintering; Thermal conductivity; Thermal conductivity of solids; Thermoelectric equipment; Thermoelectricity; Alloying effect; Electrical conductivity; Germanium doping; Lattice shrinkages; Lattice thermal conductivity; Thermo-Electric materials; Thermoelectric properties; Thermoelectric transport properties; Germanium
日期 2017
上傳時間 20-Jul-2017 15:28:22 (UTC+8)
摘要 Ge doped Cu3SbSe4 semiconductors with Cu deficiencies were synthesized by melting and spark plasma sintering for the investigation of their thermoelectric transport properties. Ge atoms can successfully substitute Sb lattice sites, and result in lattice shrinkage with increasing Ge content. Doping with Ge not only improves the electrical conductivity but also optimizes the power factor of Cu2.95(Sb1−xGex)Se4. Ge doped specimens also reveal a competition between alloying effects and increased carrier thermal conductivity. The zT enhancement of Ge doped alloys is mainly ascribed to the enhanced power factor and the reduced lattice thermal conductivity. As a result, Cu2.95(Sb0.96Ge0.04)Se4 reaches a maximum zT of 0.7 at 640 K, showing an approximately 35% enhancement over the pristine Cu2.95SbSe4. © 2016 Elsevier B.V.
關聯 Materials Letters, 186, 227-230
資料類型 article
DOI http://dx.doi.org/10.1016/j.matlet.2016.10.011
dc.contributor 應用物理所
dc.creator (作者) Chang, Chia-Hsiang;Chen, Cheng-Lung;Chiu, Wan-Ting;Chen, Yang-Yuanen-US
dc.creator (作者) 張家祥;陳洋元zh-tw
dc.date (日期) 2017
dc.date.accessioned 20-Jul-2017 15:28:22 (UTC+8)-
dc.date.available 20-Jul-2017 15:28:22 (UTC+8)-
dc.date.issued (上傳時間) 20-Jul-2017 15:28:22 (UTC+8)-
dc.identifier.uri (URI) http://nccur.lib.nccu.edu.tw/handle/140.119/111270-
dc.description.abstract (摘要) Ge doped Cu3SbSe4 semiconductors with Cu deficiencies were synthesized by melting and spark plasma sintering for the investigation of their thermoelectric transport properties. Ge atoms can successfully substitute Sb lattice sites, and result in lattice shrinkage with increasing Ge content. Doping with Ge not only improves the electrical conductivity but also optimizes the power factor of Cu2.95(Sb1−xGex)Se4. Ge doped specimens also reveal a competition between alloying effects and increased carrier thermal conductivity. The zT enhancement of Ge doped alloys is mainly ascribed to the enhanced power factor and the reduced lattice thermal conductivity. As a result, Cu2.95(Sb0.96Ge0.04)Se4 reaches a maximum zT of 0.7 at 640 K, showing an approximately 35% enhancement over the pristine Cu2.95SbSe4. © 2016 Elsevier B.V.
dc.format.extent 110 bytes-
dc.format.mimetype text/html-
dc.relation (關聯) Materials Letters, 186, 227-230
dc.subject (關鍵詞) Electric power factor; Phonons; Semiconducting selenium compounds; Semiconductor doping; Semiconductor materials; Sintering; Spark plasma sintering; Thermal conductivity; Thermal conductivity of solids; Thermoelectric equipment; Thermoelectricity; Alloying effect; Electrical conductivity; Germanium doping; Lattice shrinkages; Lattice thermal conductivity; Thermo-Electric materials; Thermoelectric properties; Thermoelectric transport properties; Germanium
dc.title (題名) Enhanced thermoelectric properties of Cu3SbSe4 by germanium dopingen-US
dc.type (資料類型) article
dc.identifier.doi (DOI) 10.1016/j.matlet.2016.10.011
dc.doi.uri (DOI) http://dx.doi.org/10.1016/j.matlet.2016.10.011