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題名 SnSe 與 Sb2Te3 奈米片的製備與熱電性質
Fabrication and Characterization of Thermoelectric Properties of SnSe and Sb2Te3 Nanoflakes
作者 吳嵐熙
Wu, Lan-Hsi
貢獻者 陳洋元
Chen, Yang-Yuan
吳嵐熙
Wu, Lan-Hsi
關鍵詞 奈米片
SnSe
Sb2Te3
日期 2025
上傳時間 1-Sep-2025 16:51:55 (UTC+8)
摘要 SnSe與Sb2Te3皆為許多國際團隊研究的熱電材料，本研究以CVD系統控制不同參數進而生長SnSe與Sb2Te3的奈米片，以探討當材料形貌變為接近二維時，其熱電性質是否會更好。 當材料生長成薄片後，使用EDX可以獲得樣品的成分比例，以確認原子百分比是否如我們的預期，而TEM可以分析奈米薄片的生長軸向，讓我們對於樣品其晶體結構有更明確的瞭解，使用OM、SEM及AFM確認奈米薄片幾何形貌及厚度。我們使用了自己設計的量測晶片，將奈米薄片轉印至晶片中心，透過微影製程的方式對樣品做個別的延伸電極，製程需使用E-Beam writer、RIE、熱蒸鍍系統及熱處理機。此研究使用實驗室自架的量測系統，可以針對樣品做熱電性質的測量，並藉由Labview自動控制儀器，使測量進行的更準確且快速。 我們各別測得了在400 K時SnSe的Power Factor為0.067 μWcm-1K-2，而Sb2Te3在400 K時的Power Factor為8.32 μWcm-1K-2。
SnSe and Sb₂Te₃ are widely studied thermoelectric materials by numerous international research teams. In this study, a chemical vapor deposition (CVD) system was used to control various growth parameters to synthesize SnSe and Sb₂Te₃ nanoflakes. The objective was to investigate whether the thermoelectric properties improve when the morphology of the materials approaches a two-dimensional (2D) structure. After the materials were synthesized in nanoflake form, energy-dispersive X-ray spectroscopy (EDX) was used to analyze their elemental composition and verify whether the atomic percentages met our expectations. Transmission electron microscopy (TEM) was employed to determine the growth orientation of the nanoflakes, providing insights into their crystal structures. The morphology and thickness of the nanoflakes were further characterized using optical microscopy (OM), scanning electron microscopy (SEM), and atomic force microscopy (AFM). We utilized a custom-designed measurement chip, onto which the nanoflakes were transferred to the central region. Individual extended electrodes were fabricated through a photolithography process involving the use of an electron beam writer, reactive ion etching (RIE), thermal evaporation system, and annealing furnace. The thermoelectric properties were measured using a self-built laboratory measurement system. The entire measurement process was automated via LabVIEW-based instrument control, enhancing both precision and efficiency. The power factor of SnSe at 400 K was measured to be 0.067 μW·cm⁻¹·K⁻², while that of Sb₂Te₃ at 400 K was found to be 8.32 μW·cm⁻¹·K⁻².
參考文獻 [1]. 陳洋元，能源新世紀 神奇的熱電材料，中央研究院物理研究所，低溫物理實驗室，上網日期114年07月05日，檢自:http://www.phys,sinica.edu.tw/~lowtemp/research.htm [2]. Liu, S., Sun, N., Liu, M., Sucharitakul, S., & Gao, X. (2018). Nanostructured SnSe: Synthesis, doping, and thermoelectric properties. Journal of Applied Physics, 123(11). [3]. Zhao, L. D., Lo, S. H., Zhang, Y., Sun, H., Tan, G., Uher, C., ... & Kanatzidis, M. G. (2014). Ultralow thermal conductivity and high thermoelectric figure of merit in SnSe crystals. nature, 508(7496), 373-377. [4]. Zhang, S., Luo, H., Wang, H., Liu, J., Suvorova, A., Ren, Y., ... & Lei, W. (2024). Controlled growth of Sb2Te3 nanoplates and their applications in ultrafast near-infrared photodetection. Optical Materials, 150, 115220. [5]. Luo, H., Pan, W., Liu, J., Wang, H., Zhang, S., Ren, Y., ... & Lei, W. (2025). Controlled growth of high-quality SnSe nanoplates assisted by machine learning. Journal of Materials Chemistry A, 13(1), 257-266. [6]. Chiu, M. H., Ji, X., Zhang, T., Mao, N., Luo, Y., Shi, C., ... & Kong, J. (2023). Growth of large‐sized 2D ultrathin SnSe crystals with in‐plane ferroelectricity. Advanced Electronic Materials, 9(4), 2201031. [7]. Giani, A., Boulouz, A., Pascal-Delannoy, F., Foucaran, A., Charles, E., & Boyer, A. (1999). Growth of Bi2Te3 and Sb2Te3 thin films by MOCVD. Materials Science and Engineering: B, 64(1), 19-24. [8]. Lewin, M., Mester, L., Saltzmann, T., Chong, S. J., Kaminski, M., Hauer, B., ... & Taubner, T. (2018). Sb2Te3 growth study reveals that formation of nanoscale charge carrier domains is an intrinsic feature relevant for electronic applications. ACS Applied Nano Materials, 1(12), 6834-6842. [9]. Qin, H., Zhu, J., Cui, B., Xie, L., Wang, W., Yin, L., ... & Sui, J. (2019). Achieving a high average zT value in Sb2Te3-based segmented thermoelectric materials. ACS Applied Materials & Interfaces, 12(1), 945-952. [10]. Wei, M., Shi, X. L., Zheng, Z. H., Li, F., Liu, W. D., Xiang, L. P., ... & Chen, Z. G. (2022). Directional thermal diffusion realizing inorganic Sb2Te3/Te hybrid thin films with high thermoelectric performance and flexibility. Advanced Functional Materials, 32(45), 2207903. [11]. 張凱鈞（2016），微結構熱電陣列之製程與研究，碩士論文，國立臺北科技大學，機電整合研究所， 臺北市大安區忠孝東路三段1號。 [12]. 蔡承勳（2017），碲化鍺摻雜鉍之熱電性質探討，碩士論文，國立臺北科技大學，製造科技研究所，臺北市大安區忠孝東路三段1號。 [13]. 蔡瑋瀚（2013），鉍-銻-碲單晶奈米線之製備與熱電性質研究，碩士論文，國立臺灣師範大學，物理研究所，臺北市大安區和平東路一段129 號。 [14]. Das, D., Malik, K., Deb, A. K., Dhara, S., Bandyopadhyay, S., & Banerjee, A. (2015). Defect induced structural and thermoelectric properties of Sb2Te3 alloy. Journal of Applied Physics, 118(4). [15]. Goncalves, L. M., Alpuim, P., Rolo, A. G., & Correia, J. H. (2011). Thermal co-evaporation of Sb2Te3 thin-films optimized for thermoelectric applications. Thin Solid Films, 519(13), 4152-4157. [16]. Hinsche, N. F., Zastrow, S., Gooth, J., Pudewill, L., Zierold, R., Rittweger, F., ... & Mertig, I. (2015). Impact of the topological surface state on the thermoelectric transport in Sb2Te3 thin films. Acs Nano, 9(4), 4406-4411. [17]. Hong, J. E., Lee, S. K., & Yoon, S. G. (2014). Enhanced thermoelectric properties of thermal treated Sb2Te3 thin films. Journal of alloys and compounds, 583, 111-115. [18]. Venkatasubramanian, R., Colpitts, T., Watko, E., Lamvik, M., & El-Masry, N. (1997). MOCVD of Bi2Te3, Sb2Te3 and their superlattice structures for thin-film thermoelectric applications. Journal of crystal growth, 170(1-4), 817-821. [19]. Wanarattikan, P., Jitthammapirom, P., Sakdanuphab, R., & Sakulkalavek, A. (2019). Effect of grain size and film thickness on the thermoelectric properties of flexible Sb2Te3 thin films. Advances in Materials Science and Engineering, 2019(1), 6954918. [20]. Li, F., Wang, H., Huang, R., Chen, W., & Zhang, H. (2022). Recent advances in SnSe nanostructures beyond thermoelectricity. Advanced Functional Materials, 32(26), 2200516. [21]. Zhao, L. D., Chang, C., Tan, G., & Kanatzidis, M. G. (2016). SnSe: a remarkable new thermoelectric material. Energy & Environmental Science, 9(10), 3044-3060. [22]. Li, L., Chen, Z., Hu, Y., Wang, X., Zhang, T., Chen, W., & Wang, Q. (2013). Single-layer single-crystalline SnSe nanosheets. Journal of the American Chemical Society, 135(4), 1213-1216. [23]. Xiao, Y., Chang, C., Pei, Y., Wu, D., Peng, K., Zhou, X., ... & Zhao, L. D. (2016). Origin of low thermal conductivity in SnSe. Physical Review B, 94(12), 125203.
描述 碩士
國立政治大學
應用物理研究所
111755004
資料來源 http://thesis.lib.nccu.edu.tw/record/#G0111755004
資料類型 thesis
dc.contributor.advisor 陳洋元zh_TW
dc.contributor.advisor Chen, Yang-Yuanen_US
dc.contributor.author (Authors) 吳嵐熙zh_TW
dc.contributor.author (Authors) Wu, Lan-Hsien_US
dc.creator (作者) 吳嵐熙zh_TW
dc.creator (作者) Wu, Lan-Hsien_US
dc.date (日期) 2025en_US
dc.date.accessioned 1-Sep-2025 16:51:55 (UTC+8)-
dc.date.available 1-Sep-2025 16:51:55 (UTC+8)-
dc.date.issued (上傳時間) 1-Sep-2025 16:51:55 (UTC+8)-
dc.identifier (Other Identifiers) G0111755004en_US
dc.identifier.uri (URI) https://nccur.lib.nccu.edu.tw/handle/140.119/159392-
dc.description (描述) 碩士zh_TW
dc.description (描述) 國立政治大學zh_TW
dc.description (描述) 應用物理研究所zh_TW
dc.description (描述) 111755004zh_TW
dc.description.abstract (摘要) SnSe與Sb2Te3皆為許多國際團隊研究的熱電材料，本研究以CVD系統控制不同參數進而生長SnSe與Sb2Te3的奈米片，以探討當材料形貌變為接近二維時，其熱電性質是否會更好。 當材料生長成薄片後，使用EDX可以獲得樣品的成分比例，以確認原子百分比是否如我們的預期，而TEM可以分析奈米薄片的生長軸向，讓我們對於樣品其晶體結構有更明確的瞭解，使用OM、SEM及AFM確認奈米薄片幾何形貌及厚度。我們使用了自己設計的量測晶片，將奈米薄片轉印至晶片中心，透過微影製程的方式對樣品做個別的延伸電極，製程需使用E-Beam writer、RIE、熱蒸鍍系統及熱處理機。此研究使用實驗室自架的量測系統，可以針對樣品做熱電性質的測量，並藉由Labview自動控制儀器，使測量進行的更準確且快速。 我們各別測得了在400 K時SnSe的Power Factor為0.067 μWcm-1K-2，而Sb2Te3在400 K時的Power Factor為8.32 μWcm-1K-2。zh_TW
dc.description.abstract (摘要) SnSe and Sb₂Te₃ are widely studied thermoelectric materials by numerous international research teams. In this study, a chemical vapor deposition (CVD) system was used to control various growth parameters to synthesize SnSe and Sb₂Te₃ nanoflakes. The objective was to investigate whether the thermoelectric properties improve when the morphology of the materials approaches a two-dimensional (2D) structure. After the materials were synthesized in nanoflake form, energy-dispersive X-ray spectroscopy (EDX) was used to analyze their elemental composition and verify whether the atomic percentages met our expectations. Transmission electron microscopy (TEM) was employed to determine the growth orientation of the nanoflakes, providing insights into their crystal structures. The morphology and thickness of the nanoflakes were further characterized using optical microscopy (OM), scanning electron microscopy (SEM), and atomic force microscopy (AFM). We utilized a custom-designed measurement chip, onto which the nanoflakes were transferred to the central region. Individual extended electrodes were fabricated through a photolithography process involving the use of an electron beam writer, reactive ion etching (RIE), thermal evaporation system, and annealing furnace. The thermoelectric properties were measured using a self-built laboratory measurement system. The entire measurement process was automated via LabVIEW-based instrument control, enhancing both precision and efficiency. The power factor of SnSe at 400 K was measured to be 0.067 μW·cm⁻¹·K⁻², while that of Sb₂Te₃ at 400 K was found to be 8.32 μW·cm⁻¹·K⁻².en_US
dc.description.tableofcontents 致謝 I 摘要 II ABSTRACT III 目錄 IV 表次 VII 圖次 VIII 第一章 緒論 1 1.1研究背景 1 1.2研究動機 2 第二章 理論介紹 4 2.1熱電效應 4 2.1.1席貝克效應（Seebeck Effect） 4 2.1.2帕爾帖效應（Peltier Effect） 5 2.1.3湯姆森效應（Thomson Effect） 6 2.2熱電優質係數（Figure of Merit, ZT） 7 第三章 儀器介紹 9 3.1材料生長儀器介紹 9 3.1.1石英管真空封管系統 9 3.1.2垂直式管爐 10 3.1.3水平式管爐 11 3.2材料分析儀器 12 3.2.1Ｘ光粉末繞射儀 12 3.2.2掃描式電子顯微鏡與能量色散X射線光譜分析儀 15 3.2.3原子力顯微鏡 (AFM) 17 3.2.4穿透式電子顯微鏡（TEM） 19 3.3製程儀器介紹 21 3.3.1光學顯微鏡 21 3.3.2手動微調平台與奈米鎢針 22 3.3.3旋塗機與加熱盤 23 3.3.4高解析高精密雙束聚焦離子系統 25 3.3.5反應式離子蝕刻系統 27 3.3.6電子束蒸鍍系統 29 3.3.7熱處理機 30 第四章 實驗介紹 32 4.1樣品製備 32 4.1.1調配比例與封管 32 4.1.2初步燒結 32 4.1.3垂直式布里茲曼長晶法 34 4.1.4水平管爐奈米薄片生長 35 4.1.5樣品選取 36 4.2製程介紹 37 4.2.1旋塗光阻與軟烤 37 4.2.2晶片設計 38 4.2.3電子束曝光與顯影 40 4.2.4RIE表面清潔 40 4.2.5蒸鍍電極與Lift-Off 41 4.2.6熱處理 41 4.3電性量測 42 4.3.1電阻與電導率的量測 42 4.3.2席貝克係數的量測 42 第五章 實驗結果與討論 44 5.1成分與晶體結構分析 44 5.1.1成分分析 44 5.1.2樣品尺寸分析 45 5.1.3晶體結構分析 50 5.2 SnSe量測結果 51 5.2.1 SnSe電阻與電導率 51 5.2.2 SnSe Seebeck係數 53 5.2.3 SnSe功率因子 54 5.3 Sb2Te3量測結果 56 5.3.1 Sb2Te3電阻與電導率 56 5.3.2 Sb2Te3席貝克係數 57 5.3.3 Sb2Te3功率因子 58 第六章 結論 59 參考文獻 60 3.2.2掃描式電子顯微鏡與能量色散X射線光譜分析儀 15 3.2.3原子力顯微鏡 (AFM) 17 3.2.4穿透式電子顯微鏡（TEM） 19 3.3製程儀器介紹 21 3.3.1光學顯微鏡 21 3.3.2手動微調平台與奈米鎢針 22 3.3.3旋塗機與加熱盤 23 3.3.4高解析高精密雙束聚焦離子系統 25 3.3.5反應式離子蝕刻系統 27 3.3.6電子束蒸鍍系統 29 3.3.7熱處理機 30 第四章 實驗介紹 32 4.1樣品製備 32 4.1.1調配比例與封管 32 4.1.2初步燒結 32 4.1.3垂直式布里茲曼長晶法 34 4.1.4水平管爐奈米薄片生長 35 4.1.5樣品選取 36 4.2製程介紹 37 4.2.1旋塗光阻與軟烤 37 4.2.2晶片設計 38 4.2.3電子束曝光與顯影 40 4.2.4RIE表面清潔 40 4.2.5蒸鍍電極與Lift-Off 41 4.2.6熱處理 41 4.3電性量測 42 4.3.1電阻與電導率的量測 42 4.3.2席貝克係數的量測 42 第五章 實驗結果與討論 44 5.1成分與晶體結構分析 44 5.1.1成分分析 44 5.1.2樣品尺寸分析 45 5.1.3晶體結構分析 50 5.2 SnSe量測結果 51 5.2.1 SnSe電阻與電導率 51 5.2.2 SnSe Seebeck係數 53 5.2.3 SnSe功率因子 54 5.3 Sb2Te3量測結果 56 5.3.1 Sb2Te3電阻與電導率 56 5.3.2 Sb2Te3席貝克係數 57 5.3.3 Sb2Te3功率因子 58 第六章 結論 59 參考文獻 60zh_TW
dc.format.extent 9709282 bytes-
dc.format.mimetype application/pdf-
dc.source.uri (資料來源) http://thesis.lib.nccu.edu.tw/record/#G0111755004en_US
dc.subject (關鍵詞) 奈米片zh_TW
dc.subject (關鍵詞) SnSezh_TW
dc.subject (關鍵詞) Sb2Te3zh_TW
dc.title (題名) SnSe 與 Sb2Te3 奈米片的製備與熱電性質zh_TW
dc.title (題名) Fabrication and Characterization of Thermoelectric Properties of SnSe and Sb2Te3 Nanoflakesen_US
dc.type (資料類型) thesisen_US
dc.relation.reference (參考文獻) [1]. 陳洋元，能源新世紀 神奇的熱電材料，中央研究院物理研究所，低溫物理實驗室，上網日期114年07月05日，檢自:http://www.phys,sinica.edu.tw/~lowtemp/research.htm [2]. Liu, S., Sun, N., Liu, M., Sucharitakul, S., & Gao, X. (2018). Nanostructured SnSe: Synthesis, doping, and thermoelectric properties. Journal of Applied Physics, 123(11). [3]. Zhao, L. D., Lo, S. H., Zhang, Y., Sun, H., Tan, G., Uher, C., ... & Kanatzidis, M. G. (2014). Ultralow thermal conductivity and high thermoelectric figure of merit in SnSe crystals. nature, 508(7496), 373-377. [4]. Zhang, S., Luo, H., Wang, H., Liu, J., Suvorova, A., Ren, Y., ... & Lei, W. (2024). Controlled growth of Sb2Te3 nanoplates and their applications in ultrafast near-infrared photodetection. Optical Materials, 150, 115220. [5]. Luo, H., Pan, W., Liu, J., Wang, H., Zhang, S., Ren, Y., ... & Lei, W. (2025). Controlled growth of high-quality SnSe nanoplates assisted by machine learning. Journal of Materials Chemistry A, 13(1), 257-266. [6]. Chiu, M. H., Ji, X., Zhang, T., Mao, N., Luo, Y., Shi, C., ... & Kong, J. (2023). Growth of large‐sized 2D ultrathin SnSe crystals with in‐plane ferroelectricity. Advanced Electronic Materials, 9(4), 2201031. [7]. Giani, A., Boulouz, A., Pascal-Delannoy, F., Foucaran, A., Charles, E., & Boyer, A. (1999). Growth of Bi2Te3 and Sb2Te3 thin films by MOCVD. Materials Science and Engineering: B, 64(1), 19-24. [8]. Lewin, M., Mester, L., Saltzmann, T., Chong, S. J., Kaminski, M., Hauer, B., ... & Taubner, T. (2018). Sb2Te3 growth study reveals that formation of nanoscale charge carrier domains is an intrinsic feature relevant for electronic applications. ACS Applied Nano Materials, 1(12), 6834-6842. [9]. Qin, H., Zhu, J., Cui, B., Xie, L., Wang, W., Yin, L., ... & Sui, J. (2019). Achieving a high average zT value in Sb2Te3-based segmented thermoelectric materials. ACS Applied Materials & Interfaces, 12(1), 945-952. [10]. Wei, M., Shi, X. L., Zheng, Z. H., Li, F., Liu, W. D., Xiang, L. P., ... & Chen, Z. G. (2022). Directional thermal diffusion realizing inorganic Sb2Te3/Te hybrid thin films with high thermoelectric performance and flexibility. Advanced Functional Materials, 32(45), 2207903. [11]. 張凱鈞（2016），微結構熱電陣列之製程與研究，碩士論文，國立臺北科技大學，機電整合研究所， 臺北市大安區忠孝東路三段1號。 [12]. 蔡承勳（2017），碲化鍺摻雜鉍之熱電性質探討，碩士論文，國立臺北科技大學，製造科技研究所，臺北市大安區忠孝東路三段1號。 [13]. 蔡瑋瀚（2013），鉍-銻-碲單晶奈米線之製備與熱電性質研究，碩士論文，國立臺灣師範大學，物理研究所，臺北市大安區和平東路一段129 號。 [14]. Das, D., Malik, K., Deb, A. K., Dhara, S., Bandyopadhyay, S., & Banerjee, A. (2015). Defect induced structural and thermoelectric properties of Sb2Te3 alloy. Journal of Applied Physics, 118(4). [15]. Goncalves, L. M., Alpuim, P., Rolo, A. G., & Correia, J. H. (2011). Thermal co-evaporation of Sb2Te3 thin-films optimized for thermoelectric applications. Thin Solid Films, 519(13), 4152-4157. [16]. Hinsche, N. F., Zastrow, S., Gooth, J., Pudewill, L., Zierold, R., Rittweger, F., ... & Mertig, I. (2015). Impact of the topological surface state on the thermoelectric transport in Sb2Te3 thin films. Acs Nano, 9(4), 4406-4411. [17]. Hong, J. E., Lee, S. K., & Yoon, S. G. (2014). Enhanced thermoelectric properties of thermal treated Sb2Te3 thin films. Journal of alloys and compounds, 583, 111-115. [18]. Venkatasubramanian, R., Colpitts, T., Watko, E., Lamvik, M., & El-Masry, N. (1997). MOCVD of Bi2Te3, Sb2Te3 and their superlattice structures for thin-film thermoelectric applications. Journal of crystal growth, 170(1-4), 817-821. [19]. Wanarattikan, P., Jitthammapirom, P., Sakdanuphab, R., & Sakulkalavek, A. (2019). Effect of grain size and film thickness on the thermoelectric properties of flexible Sb2Te3 thin films. Advances in Materials Science and Engineering, 2019(1), 6954918. [20]. Li, F., Wang, H., Huang, R., Chen, W., & Zhang, H. (2022). Recent advances in SnSe nanostructures beyond thermoelectricity. Advanced Functional Materials, 32(26), 2200516. [21]. Zhao, L. D., Chang, C., Tan, G., & Kanatzidis, M. G. (2016). SnSe: a remarkable new thermoelectric material. Energy & Environmental Science, 9(10), 3044-3060. [22]. Li, L., Chen, Z., Hu, Y., Wang, X., Zhang, T., Chen, W., & Wang, Q. (2013). Single-layer single-crystalline SnSe nanosheets. Journal of the American Chemical Society, 135(4), 1213-1216. [23]. Xiao, Y., Chang, C., Pei, Y., Wu, D., Peng, K., Zhou, X., ... & Zhao, L. D. (2016). Origin of low thermal conductivity in SnSe. Physical Review B, 94(12), 125203.zh_TW