| dc.contributor | 應物所 | en_US |
| dc.creator (作者) | 郭光宇 | zh_TW |
| dc.creator (作者) | Nie, S. H.;Chin, Y. Y.;Liu, W. Q.;Tung, J. C.;Lu, J.;Lin, H. J.;Guo, G. Y.;Meng, K. K.;Chen, L.;Zhu, L. J.;Pan, D.;Chen, C. T.;Xu, Y. B.;Yan, W. S.;Zhao, J. H. | en_US |
| dc.date (日期) | 2013.07 | en_US |
| dc.date.accessioned | 9-Dec-2013 13:38:19 (UTC+8) | - |
| dc.date.available | 9-Dec-2013 13:38:19 (UTC+8) | - |
| dc.date.issued (上傳時間) | 9-Dec-2013 13:38:19 (UTC+8) | - |
| dc.identifier.uri (URI) | http://nccur.lib.nccu.edu.tw/handle/140.119/62307 | - |
| dc.description.abstract (摘要) | The magnetic properties of a Co2FeAl/(Ga,Mn)As bilayer epitaxied on GaAs (001) are studied both experimentally and theoretically. Unlike the common antiferromagnetic interfacial interaction existing in most ferromagnet-magnetic semiconductor bilayers, a ferromagnetic interfacial interaction in the Co2FeAl/(Ga,Mn)As bilayer is observed from measurements of magnetic hysteresis and x-ray magnetic circular dichroism. The Mn ions in a 1.36 nm thick (Ga,Mn)As layer remain spin polarized up to 400 K due to the magnetic proximity effect. The minor loops of the Co2FeAl/(Ga,Mn)As bilayer shift with a small ferromagnetic interaction field of +24 Oe and -23 Oe at 15 K. The observed ferromagnetic interfacial coupling is supported by ab initio density functional calculations. These findings may provide a viable pathway for designing room-temperature semiconductor spintronic devices through magnetic proximity effect. | en_US |
| dc.format.extent | 1748610 bytes | - |
| dc.format.mimetype | application/pdf | - |
| dc.language.iso | en_US | - |
| dc.relation (關聯) | Physical Review Letters, 111(2), 027203-1-027203-5 | en_US |
| dc.title (題名) | Ferromagnetic Interfacial Interaction and the Proximity Effect in a Co2FeAl/(Ga,Mn)As Bilayer | en_US |
| dc.type (資料類型) | article | en |
| dc.identifier.doi (DOI) | 10.1103/PhysRevLett.111.027203 | en_US |
| dc.doi.uri (DOI) | http://dx.doi.org/10.1103/PhysRevLett.111.027203 | en_US |
