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題名 Tunneling conductance of graphene ferromagnet-insulator-superconductor junctions
作者 郭光宇
Hsu, Ya-Fen ; Guo, Guang-Yu
貢獻者 應物所
日期 2010.01
上傳時間 24-Jan-2014 12:22:12 (UTC+8)
摘要 We study the transport properties of a graphene ferromagnet-insulator-superconductor (FIS) junction within the Blonder-Tinkham-Klapwijk formalism by solving spin-polarized Dirac-Bogoliubov-de-Gennes equation. In particular, we calculate the spin polarization of tunneling current at the I-S interface and investigate how the exchange splitting of the Dirac fermion bands influences the characteristic conductance oscillation of the graphene junctions. We find that the retro- and specular Andreev reflections in the graphene FIS junction are drastically modified in the presence of exchange interaction and that the spin polarization of tunneling current can be tuned from the positive to negative value by bias voltage . In the thin-barrier limit, the conductance of a graphene FIS junction oscillates as a function of barrier strength . Both the amplitude and phase of the conductance oscillation varies with the exchange energy . For (Fermi energy), the amplitude of oscillation decreases with . For , the amplitude of oscillation increases with , where ( is the applied electrostatic potential on the superconducting segment of the junction). For , the amplitude of oscillation decreases with again. Interestingly, a universal phase difference of in exists between the curves for and . Finally, we find that the transitions between retro- and specular Andreev reflections occur at and , and hence the singular behavior of the conductance near these bias voltages results from the difference in transport properties between specular and retro-Andreev reflections.
關聯 Physical Review B, 81(4), 045412
資料來源 http://link.aps.org/doi/10.1103/PhysRevB.81.045412
資料類型 article
DOI http://dx.doi.org/10.1103/PhysRevB.81.045412
dc.contributor 應物所en_US
dc.creator (作者) 郭光宇zh_TW
dc.creator (作者) Hsu, Ya-Fen ; Guo, Guang-Yuen_US
dc.date (日期) 2010.01en_US
dc.date.accessioned 24-Jan-2014 12:22:12 (UTC+8)-
dc.date.available 24-Jan-2014 12:22:12 (UTC+8)-
dc.date.issued (上傳時間) 24-Jan-2014 12:22:12 (UTC+8)-
dc.identifier.uri (URI) http://nccur.lib.nccu.edu.tw/handle/140.119/63527-
dc.description.abstract (摘要) We study the transport properties of a graphene ferromagnet-insulator-superconductor (FIS) junction within the Blonder-Tinkham-Klapwijk formalism by solving spin-polarized Dirac-Bogoliubov-de-Gennes equation. In particular, we calculate the spin polarization of tunneling current at the I-S interface and investigate how the exchange splitting of the Dirac fermion bands influences the characteristic conductance oscillation of the graphene junctions. We find that the retro- and specular Andreev reflections in the graphene FIS junction are drastically modified in the presence of exchange interaction and that the spin polarization of tunneling current can be tuned from the positive to negative value by bias voltage . In the thin-barrier limit, the conductance of a graphene FIS junction oscillates as a function of barrier strength . Both the amplitude and phase of the conductance oscillation varies with the exchange energy . For (Fermi energy), the amplitude of oscillation decreases with . For , the amplitude of oscillation increases with , where ( is the applied electrostatic potential on the superconducting segment of the junction). For , the amplitude of oscillation decreases with again. Interestingly, a universal phase difference of in exists between the curves for and . Finally, we find that the transitions between retro- and specular Andreev reflections occur at and , and hence the singular behavior of the conductance near these bias voltages results from the difference in transport properties between specular and retro-Andreev reflections.en_US
dc.format.extent 361712 bytes-
dc.format.mimetype application/pdf-
dc.language.iso en_US-
dc.relation (關聯) Physical Review B, 81(4), 045412en_US
dc.source.uri (資料來源) http://link.aps.org/doi/10.1103/PhysRevB.81.045412en_US
dc.title (題名) Tunneling conductance of graphene ferromagnet-insulator-superconductor junctionsen_US
dc.type (資料類型) articleen
dc.identifier.doi (DOI) 10.1103/PhysRevB.81.045412en_US
dc.doi.uri (DOI) http://dx.doi.org/10.1103/PhysRevB.81.045412en_US