| dc.contributor | 應物所 | en_US |
| dc.creator (作者) | 郭光宇 | zh_TW |
| dc.creator (作者) | Chen, S. W. ; Huang, S. C. ; Guo, G. Y. ; Lee, . M. ; Chiang, S. ; Chen, W. C. ; Liang, Y. C. ; Lu, K. T. ; Chen, J. M. | en_US |
| dc.date (日期) | 2011.07 | en_US |
| dc.date.accessioned | 28-Apr-2014 17:42:23 (UTC+8) | - |
| dc.date.available | 28-Apr-2014 17:42:23 (UTC+8) | - |
| dc.date.issued (上傳時間) | 28-Apr-2014 17:42:23 (UTC+8) | - |
| dc.identifier.uri (URI) | http://nccur.lib.nccu.edu.tw/handle/140.119/65646 | - |
| dc.description.abstract (摘要) | We present experimental evidence of the gapless band structure of PbPdO2 by combined x-ray photoemission and x-ray absorption spectra complemented with first principles band structure calculations. The electronic structure near the Fermi level of PbPdO2 is mainly composed of O 2p and Pd 4d bands, constructing the conduction path along the Pd-O layer in PbPdO2. Pd deficiency in PbPdO2 causes decreased O 2p-Pd 4d and increased O 2p-Pb 6p hybridizations, thereby inducing a small band gap and hence reducing conductivity. Hall measurements indicate that PbPdO2 is a p-type gapless semiconductor with intrinsic hole carriers transporting in the Pd-O layers. | en_US |
| dc.format.extent | 711174 bytes | - |
| dc.format.mimetype | application/pdf | - |
| dc.language.iso | en_US | - |
| dc.relation (關聯) | Applied Physics Letters, 99, 012103 | en_US |
| dc.title (題名) | Gapless band structure of PbPdO2: A combined first principles calculation and experimental study | en_US |
| dc.type (資料類型) | article | en |
| dc.identifier.doi (DOI) | 10.1063/1.3607293 | en_US |
| dc.doi.uri (DOI) | http://dx.doi.org/10.1063/1.3607293 | en_US |
