| dc.contributor | 應物所 | en_US |
| dc.creator (作者) | 蕭又新 | zh_TW |
| dc.creator (作者) | Shiau,Yuo-Hsien | en_US |
| dc.date (日期) | 2011.01 | en_US |
| dc.date.accessioned | 25-Sep-2014 12:22:09 (UTC+8) | - |
| dc.date.available | 25-Sep-2014 12:22:09 (UTC+8) | - |
| dc.date.issued (上傳時間) | 25-Sep-2014 12:22:09 (UTC+8) | - |
| dc.identifier.uri (URI) | http://nccur.lib.nccu.edu.tw/handle/140.119/70159 | - |
| dc.description.abstract (摘要) | The understanding of the origin of electronic noise would be very important in semiconductor devices. Detecting time characteristics via statistical approaches has been known to be useful in complex systems. In this study, the ensemble Monte Carlo particle method is used to simulate electron transport in a layered III–V semiconductor at room temperature. Nonlinear/erratic spiking fluctuations are predominant at the onset of current instabilities. To explore time characteristics detrended fluctuation analysis is used to analyze interspike intervals in different scales. Interestingly, multifractal behaviors are responsible for this kind of electronic noise. Therefore, it indicates that many extra time-characteristic would emerge in semiconductor devices, which would be strongly related to polar optical phonon scattering for intervalley transfer. | en_US |
| dc.format.extent | 304025 bytes | - |
| dc.format.mimetype | application/pdf | - |
| dc.language.iso | en_US | - |
| dc.relation (關聯) | Solid State Communications,151(2),135-138 | en_US |
| dc.title (題名) | Understanding as well as characterization of erratic interspike dynamics in semiconductor devices | en_US |
| dc.type (資料類型) | article | en |
| dc.identifier.doi (DOI) | 10.1016/j.ssc.2010.11.005 | en_US |
| dc.doi.uri (DOI) | http://dx.doi.org/http://dx.doi.org/10.1016/j.ssc.2010.11.005 | en_US |
