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題名 Understanding as well as characterization of erratic interspike dynamics in semiconductor devices
作者 蕭又新
Shiau,Yuo-Hsien
貢獻者 應物所
日期 2011.01
上傳時間 25-九月-2014 12:22:09 (UTC+8)
摘要 The understanding of the origin of electronic noise would be very important in semiconductor devices. Detecting time characteristics via statistical approaches has been known to be useful in complex systems. In this study, the ensemble Monte Carlo particle method is used to simulate electron transport in a layered III–V semiconductor at room temperature. Nonlinear/erratic spiking fluctuations are predominant at the onset of current instabilities. To explore time characteristics detrended fluctuation analysis is used to analyze interspike intervals in different scales. Interestingly, multifractal behaviors are responsible for this kind of electronic noise. Therefore, it indicates that many extra time-characteristic would emerge in semiconductor devices, which would be strongly related to polar optical phonon scattering for intervalley transfer.
關聯 Solid State Communications,151(2),135-138
資料類型 article
DOI http://dx.doi.org/http://dx.doi.org/10.1016/j.ssc.2010.11.005
dc.contributor 應物所en_US
dc.creator (作者) 蕭又新zh_TW
dc.creator (作者) Shiau,Yuo-Hsienen_US
dc.date (日期) 2011.01en_US
dc.date.accessioned 25-九月-2014 12:22:09 (UTC+8)-
dc.date.available 25-九月-2014 12:22:09 (UTC+8)-
dc.date.issued (上傳時間) 25-九月-2014 12:22:09 (UTC+8)-
dc.identifier.uri (URI) http://nccur.lib.nccu.edu.tw/handle/140.119/70159-
dc.description.abstract (摘要) The understanding of the origin of electronic noise would be very important in semiconductor devices. Detecting time characteristics via statistical approaches has been known to be useful in complex systems. In this study, the ensemble Monte Carlo particle method is used to simulate electron transport in a layered III–V semiconductor at room temperature. Nonlinear/erratic spiking fluctuations are predominant at the onset of current instabilities. To explore time characteristics detrended fluctuation analysis is used to analyze interspike intervals in different scales. Interestingly, multifractal behaviors are responsible for this kind of electronic noise. Therefore, it indicates that many extra time-characteristic would emerge in semiconductor devices, which would be strongly related to polar optical phonon scattering for intervalley transfer.en_US
dc.format.extent 304025 bytes-
dc.format.mimetype application/pdf-
dc.language.iso en_US-
dc.relation (關聯) Solid State Communications,151(2),135-138en_US
dc.title (題名) Understanding as well as characterization of erratic interspike dynamics in semiconductor devicesen_US
dc.type (資料類型) articleen
dc.identifier.doi (DOI) 10.1016/j.ssc.2010.11.005en_US
dc.doi.uri (DOI) http://dx.doi.org/http://dx.doi.org/10.1016/j.ssc.2010.11.005en_US