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題名 Stochastic magnetoresistance behavior in current-perpendicular-to-plane submicron spin valve pillars
作者 李尚凡
Lin, L.K.; Huang, J.H. ; Lee,Shang-Fan
貢獻者 應物所
日期 2011-10
上傳時間 9-Oct-2014 15:51:07 (UTC+8)
摘要 We prepared giant magnetoresistance samples comprising of pseudo spin valve structures and measured the current-perpendicular-to-plane magnetoresistance (MR) with applied magnetic field along the easy and hard axes of the samples. When the magnetic field was applied along the easy axis, high and low resistance states representing magnetization parallel and anti-parallel states were observed. However, when the magnetic field was applied along the hard axis, two stochastic MR curves were obtained. The two distinct MR curves correspond to the different magnetizations reversal processes via two kinds of the magnetization orientation states, fully parallel and anti-parallel, at remanence. In our case, the two distinct magnetization reversal processes occurred randomly.
關聯 IEEE Trans. Magn.,47(10),3463-3466
資料類型 article
DOI http://dx.doi.org/10.1109/TMAG.2011.2156389
dc.contributor 應物所en_US
dc.creator (作者) 李尚凡zh_TW
dc.creator (作者) Lin, L.K.; Huang, J.H. ; Lee,Shang-Fanen_US
dc.date (日期) 2011-10en_US
dc.date.accessioned 9-Oct-2014 15:51:07 (UTC+8)-
dc.date.available 9-Oct-2014 15:51:07 (UTC+8)-
dc.date.issued (上傳時間) 9-Oct-2014 15:51:07 (UTC+8)-
dc.identifier.uri (URI) http://nccur.lib.nccu.edu.tw/handle/140.119/70505-
dc.description.abstract (摘要) We prepared giant magnetoresistance samples comprising of pseudo spin valve structures and measured the current-perpendicular-to-plane magnetoresistance (MR) with applied magnetic field along the easy and hard axes of the samples. When the magnetic field was applied along the easy axis, high and low resistance states representing magnetization parallel and anti-parallel states were observed. However, when the magnetic field was applied along the hard axis, two stochastic MR curves were obtained. The two distinct MR curves correspond to the different magnetizations reversal processes via two kinds of the magnetization orientation states, fully parallel and anti-parallel, at remanence. In our case, the two distinct magnetization reversal processes occurred randomly.en_US
dc.format.extent 281 bytes-
dc.format.mimetype text/html-
dc.language.iso en_US-
dc.relation (關聯) IEEE Trans. Magn.,47(10),3463-3466en_US
dc.title (題名) Stochastic magnetoresistance behavior in current-perpendicular-to-plane submicron spin valve pillarsen_US
dc.type (資料類型) articleen
dc.identifier.doi (DOI) 10.1109/TMAG.2011.2156389-
dc.doi.uri (DOI) http://dx.doi.org/10.1109/TMAG.2011.2156389-