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題名 A 90-nm Power Optimization Methodology With Application to the ARM 1136JF-S Microprocessor
作者 Kuo;Geng-Sheng;Khan, A.;Watson, P.;Le, D.;Nguyen, T.;Yang, S.;Bennett, P.;Huang, Pokai;Gill, J.;Hawkins, C.;Goodenough, J.;Wang, Demin;Ahmed, I.;Tran, P.;Mak, H.;Kim, Oanh;Martin, F.;Fan, Y.;Ge, D.;Kung, J.;Shek, V.
郭更生
貢獻者 企管系
日期 2006-08
上傳時間 6-Mar-2015 11:09:14 (UTC+8)
摘要 An electrical and physical design power optimization methodology and design techniques developed to create an IC with an ARM 1136JF-S microprocessor in 90-nm standard CMOS are presented. Design technology and methodology enhancements to enable multiple supply voltage operation, leakage current and clock rate optimization, single-pass RTL synthesis, VDD selection, power optimization and timing and electrical closure in a multi-VDD domain design are described. A 40% reduction in dynamic and a 46% reduction in leakage power dissipation has been achieved while maintaining a 355-MHz operating clock rate under typical conditions. Functional and electrical design requirements were achieved with the first silicon.
關聯 IEEE Journal of Solid-state Circuits, 41(8), 1707-1717
資料類型 article
DOI http://dx.doi.org/10.1109/JSSC.2006.877248
dc.contributor 企管系
dc.creator (作者) Kuo;Geng-Sheng;Khan, A.;Watson, P.;Le, D.;Nguyen, T.;Yang, S.;Bennett, P.;Huang, Pokai;Gill, J.;Hawkins, C.;Goodenough, J.;Wang, Demin;Ahmed, I.;Tran, P.;Mak, H.;Kim, Oanh;Martin, F.;Fan, Y.;Ge, D.;Kung, J.;Shek, V.
dc.creator (作者) 郭更生zh_TW
dc.date (日期) 2006-08
dc.date.accessioned 6-Mar-2015 11:09:14 (UTC+8)-
dc.date.available 6-Mar-2015 11:09:14 (UTC+8)-
dc.date.issued (上傳時間) 6-Mar-2015 11:09:14 (UTC+8)-
dc.identifier.uri (URI) http://nccur.lib.nccu.edu.tw/handle/140.119/73682-
dc.description.abstract (摘要) An electrical and physical design power optimization methodology and design techniques developed to create an IC with an ARM 1136JF-S microprocessor in 90-nm standard CMOS are presented. Design technology and methodology enhancements to enable multiple supply voltage operation, leakage current and clock rate optimization, single-pass RTL synthesis, VDD selection, power optimization and timing and electrical closure in a multi-VDD domain design are described. A 40% reduction in dynamic and a 46% reduction in leakage power dissipation has been achieved while maintaining a 355-MHz operating clock rate under typical conditions. Functional and electrical design requirements were achieved with the first silicon.
dc.format.extent 130 bytes-
dc.format.mimetype text/html-
dc.relation (關聯) IEEE Journal of Solid-state Circuits, 41(8), 1707-1717
dc.title (題名) A 90-nm Power Optimization Methodology With Application to the ARM 1136JF-S Microprocessor
dc.type (資料類型) articleen
dc.identifier.doi (DOI) 10.1109/JSSC.2006.877248en_US
dc.doi.uri (DOI) http://dx.doi.org/10.1109/JSSC.2006.877248 en_US