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題名 鐵磁材料/拓樸絕緣體(鎳鐵合金/碲化鉍)雙層薄膜結構之自旋幫浦效應
Spin-pumping Effect in Ferromagnet/Topological Insulator (NiFe/Bi2Te3) Bilayer structure作者 邱文凱
Chiu, Wen Kai貢獻者 李尚凡
Lee, Shang Fan
邱文凱
Chiu, Wen Kai關鍵詞 鐵磁共振
拓樸絕緣體
碲化鉍
自旋幫浦效應
有效場
ferromagnetic resonance
Topological Insulator
Bi2Te3
spin pumping effect
effective field日期 2015 上傳時間 1-Sep-2015 16:18:31 (UTC+8) 摘要 我們主要研究拓樸絕緣體與鐵磁物質之間的自旋幫浦效應(spin pumping effect),我們選用的鐵磁材料是具有鐵磁性的鎳鐵合金(Py),厚度固定為40nm,而拓樸絕緣體則是選用碲化鉍(Bi2Te3),厚度範圍是0~100nm,碲化鉍已被確定為一個三維拓撲絕緣體,拓撲絕緣體其表面電子態呈線性色散關係,本身中心是絕緣體,但其表面容許有導電態。此導電態一個最有用的特性是其電子的動量與自旋維持一定方向關係(spin-momentum locking),這使得以自旋來傳遞訊息成為可能。但是實驗上要達到中心是絕緣體相當困難。 過去的實驗已驗證鐵磁共振(Ferromagnetic resonance,FMR)現象在鐵磁/一般金屬雙層膜以及鐵磁/半導體雙層膜,可以使其鐵磁層產生一純自旋流流向非磁性層,這被稱為自旋幫浦效應(spin pumping effect)。當此自旋流跨越膜面介面時,不同自旋的電子由於自旋軌道耦合作用(Spin–orbit interaction),將發生逆自旋霍爾效應(ISHE)並產生一橫向電荷流。在我們的研究中,鐵磁共振(FMR)現象透過網路分析儀在設定的外加磁場下掃描頻率。測得的共振頻率與磁場作圖並以Kittel equation擬合(fitting)出有效場(effective field)。我們發現於絕對溫度5K,隨著碲化鉍(Bi2Te3)膜厚從0nm到15nm增加時,其有效場也增加,但當薄膜厚度大於15nm時,有效磁場將下降。我們分析碲化鉍(Bi2Te3)的表面態(surface state)與塊材(bulk)對有效場變化之貢獻。 參考文獻 [1] M.I. Dyakonov and V.I. Perel, Phys. Lett. A, 35: 459 (1971)[2] J. E. Hirsch, Phys. Rev. Lett, 83: 1834 (1999)[3] Shufeng Zhang, Phys. Rev. Lett, 85: 393 (2000)[4] Shuichi Murakami, Phys. Lett. B, 69: 241202 (2004)[5] Jairo Sinova, Dimitrie Culcer, Q. Niu, N. A. Sinitsyn, T. Jungwirth, and A. H. MacDonald, Phys. Rev. Lett, 92: 126603 (2004)[6] YK Kato, RC Myers, AC Gossard, and DD Awschalom, Science 306 (5703), 1910-1913 (2004)[7] J. Wunderlich, B. Kaestner, J. Sinova, and T. Jungwirth, Phys. Rev. Lett, 94: 047204 (2005)[8] S. O. Valenzuela, and M. Tinkham, Nature 442, 176-179 (2006)[9] Takeshi Seki, Yu Hasegawa, Seiji Mitani, Saburo Takahashi, Hiroshi Imamura, Sadamichi Maekawa, Junsaku Nitta, and Koki Takanashi, Nature Materials 7, 125 - 129 (2008)[10] T. Kimura, Y. Otani, T. Sato, S. Takahashi, and S. Maekawa, Phys. Rev. Lett, 98: 156601 (2007)[11] Sadamichi Maekawa, and Teruya Shinjo, Spin dependent transport in magnetic nanostructures. CRC Press[12] Arne Brataas, Andrew D. Kent, and Hideo Ohno, Nature Materials 11, 372–381 (2012)[13] Tomas Jungwirth, Jörg Wunderlich, and Kamil OlejníkNature, Nature Materials 11, 382–390 (2012)[14] C.L. Kane and E.J. Mele, Phys. Rev. Lett. 95, 226801 (2005).[15] Shuichi Murakami, Naoto Nagaosa, and Shou-Cheng Zhang, Science 301, 1348-1351 (2003)[16] D. Culcer, J. Sinova, N. A. Sinitsyn, T. Jungwirth, A. H.MacDonald, and Q. Niu, Phys. Rev. Lett. 93, 46602 (2004)[17] Axel Hoffmann, Electric Control and Detection of Spin Waves (http://online.kitp.ucsb.edu/online/spintronics_c13/hoffmann/pdf/Hoffmann_Spintronics13Conf_KITP.pdf)[18] E. Saitoh, M. Ueda, H. Miyajima, and G. Tatara, Appl. Phys. Lett. 88, 182509–182509 (2006)[19] A. H. Castro Neto, F. Guinea, N. M. R. Peres, K. S. Novoselov, and A. K. Geim, Rev. Mod. Phys. 81, 109 (2009) [20] Igor Žutić, Jaroslav Fabian, and S. Das Sarma, Rev. Mod. Phys. 76, 323(2004)[21] E. H. Hall, Philos. Mag. 10, 301 (1880); 12, 157 (1881)[22] E. H. Hall, Philos. Mag. 12, 157 (1881) [23] Yaroslav Tserkovnyak, Arne Brataas, and Gerrit E. W. Bauer, Phys. Rev. Lett. 88, 117601 (2002)[24] Igor Žutić, and Hanan DeryNature, Nature Materials 10, 647–648 (2011) [25] Bakun A. A. , Zakharchenya B. P. , Rogachev A. A. , Tkachuk M. N., and Fleisher V. G, Sov. Phys. JETP Lett. 40: 1293 (1984)[26] Jung-Chuan Lee, Leng-Wei Huang, Dung-Shing Hung, Tung-Han Chiang, J. C. A. Huang, Jun-Zhi Liang, and Shang-Fan Lee, Appl. Phys. Lett. 104, 209903 (2014)[27] Markus König, Steffen Wiedmann, Christoph Brüne, Andreas Roth, Hartmut Buhmann, Laurens W. Molenkamp, Xiao-Liang Qi, Shou-Cheng Zhang, Science 318 (5851): 766–770 (2007)[28] Y. Shiomi, K. Nomura, Y. Kajiwara, K. Eto, M. Novak, Kouji Segawa, Yoichi Ando, and E. Saitoh, Phys. Rev. Lett. 113, 196601 (2014)[29] HuJun Jiao and Gerrit E. W. Bauer, Phys. Rev. Lett. 110, 217602 (2013)[30] A. A. Baker, A. I. Figueroa, L. J. Collins-McIntyre, G. van der Laan, and T. Hesjedala, Sci. Rep. 5, 7907, Supplementary Information (2015)[31] Yokoyama, T., Zang, J. & Nagaosa, N. Theoretical study of the dynamics of magnetization on the topological surface. Phys. Rev. B 81, 241410 (2010).[32] Garate, I. & Franz, M. Inverse spin-galvanic effect in the interface between a topological insulator and a ferromagnet. Phys. Rev. Lett. 104, 146802 (2010).[33] Lee. H. W., K. C. Kim, and J. Lee, IEEE Trans. Magn., Vol. 42, No. 7, 1917-1925 (2006)[34] Condensed Matter Group:TutSputtering, http://www.stoner.leeds.ac.uk/Research/TutSputtering[35] 網路分析的基本概念, http://www.ni.com/white-paper/11640/zht/[36] Agilent Technologies, Understanding the Fundamental Principles of Vector Network Analysis. Agilent AN 1287-1, Application Note.[37] Hai-Zhou Lu, and Shun-Qing Shen, Proc. Of Spie. 9167, 91672E (2014)[38] Hong-Tao He, Gan Wang, Tao Zhang, Iam-Keong Sou, George K. L Wong, Jian-Nong Wang, Hai-Zhou Lu, Shun-Qing Shen, and Fu-Chun Zhang, Phys. Rev. Lett. 106, 166805 (2011)[39] Shao-Pin Chiu, and Juhn-Jong Lin, Phys. Rev. B 87, 035122 (2013)[40] Jianshi Tang, Li-Te Chang, Xufeng Kou, Koichi Murata, Eun Sang Choi, Murong Lang, Yabin Fan, Ying Jiang, Mohammad Montazeri, Wanjun Jiang, Yong Wang, Liang He, and Kang L. Wang, Nano Lett. 14, 5423−5429 (2014)[41] http://mathworld.wolfram.com/PolygammaFunction.html[42] http://www.originlab.com/doc/LabTalk/ref/Real-polygamma-func[43] L.M. Goncalves, C. Couto, P. Alpuim, A.G. Rolo, F. Völklein, J.H. Correia, Thin Solid FilmsVolume 518, Issue 10, Pages 2816–2821 (2010)[44] Faria Basheer Abdulahad, Dung-Shung Hung, Yu-Che Chiu, and Shang-Fan. Lee, IEEE Trans. Magn., VOL. 47, NO. 10(2011)[45] M. Jamali, J. S. Lee, Y. Lv, Z. Zhao, N. Samarth, and J. P. Wang, Room Temperature Spin Pumping in Topological Insulator Bi2Se3. arXiv:1407.7940 (2014)[46] CN Wu, YH Lin, YT Fanchiang, HY Hung, HY Lin, PH Lin, JG Lin, SF Lee, M Hong, and J Kwo, J. Appl. Phys. 117, 17D148 (2015) 描述 碩士
國立政治大學
應用物理研究所
102755012資料來源 http://thesis.lib.nccu.edu.tw/record/#G0102755012 資料類型 thesis dc.contributor.advisor 李尚凡 zh_TW dc.contributor.advisor Lee, Shang Fan en_US dc.contributor.author (Authors) 邱文凱 zh_TW dc.contributor.author (Authors) Chiu, Wen Kai en_US dc.creator (作者) 邱文凱 zh_TW dc.creator (作者) Chiu, Wen Kai en_US dc.date (日期) 2015 en_US dc.date.accessioned 1-Sep-2015 16:18:31 (UTC+8) - dc.date.available 1-Sep-2015 16:18:31 (UTC+8) - dc.date.issued (上傳時間) 1-Sep-2015 16:18:31 (UTC+8) - dc.identifier (Other Identifiers) G0102755012 en_US dc.identifier.uri (URI) http://nccur.lib.nccu.edu.tw/handle/140.119/78092 - dc.description (描述) 碩士 zh_TW dc.description (描述) 國立政治大學 zh_TW dc.description (描述) 應用物理研究所 zh_TW dc.description (描述) 102755012 zh_TW dc.description.abstract (摘要) 我們主要研究拓樸絕緣體與鐵磁物質之間的自旋幫浦效應(spin pumping effect),我們選用的鐵磁材料是具有鐵磁性的鎳鐵合金(Py),厚度固定為40nm,而拓樸絕緣體則是選用碲化鉍(Bi2Te3),厚度範圍是0~100nm,碲化鉍已被確定為一個三維拓撲絕緣體,拓撲絕緣體其表面電子態呈線性色散關係,本身中心是絕緣體,但其表面容許有導電態。此導電態一個最有用的特性是其電子的動量與自旋維持一定方向關係(spin-momentum locking),這使得以自旋來傳遞訊息成為可能。但是實驗上要達到中心是絕緣體相當困難。 過去的實驗已驗證鐵磁共振(Ferromagnetic resonance,FMR)現象在鐵磁/一般金屬雙層膜以及鐵磁/半導體雙層膜,可以使其鐵磁層產生一純自旋流流向非磁性層,這被稱為自旋幫浦效應(spin pumping effect)。當此自旋流跨越膜面介面時,不同自旋的電子由於自旋軌道耦合作用(Spin–orbit interaction),將發生逆自旋霍爾效應(ISHE)並產生一橫向電荷流。在我們的研究中,鐵磁共振(FMR)現象透過網路分析儀在設定的外加磁場下掃描頻率。測得的共振頻率與磁場作圖並以Kittel equation擬合(fitting)出有效場(effective field)。我們發現於絕對溫度5K,隨著碲化鉍(Bi2Te3)膜厚從0nm到15nm增加時,其有效場也增加,但當薄膜厚度大於15nm時,有效磁場將下降。我們分析碲化鉍(Bi2Te3)的表面態(surface state)與塊材(bulk)對有效場變化之貢獻。 zh_TW dc.description.tableofcontents 目錄摘要 I目錄 III圖目錄 V表目錄 X第一章 緒論 1第二章 基本理論 52.1鐵磁共振 52.2 Kittel equation 92.3自旋幫浦(spin pumping) 112.4磁阻(magnetoresistance,MR) 122.5自旋霍爾效應(Spin Hall Effect,SHE) 142.6逆自旋霍爾效應(Inverse Spin Hall Effect,ISHE) 152.7弱反局域效應(Weak Anti-Localization,WAL) 18第三章 文獻回顧 19第四章 儀器設備與實驗原理 304.1 簡介 304.2真空離子濺鍍系統(Sputter) 314.3物理性質量測系統(Physical Properties Measurement System) 374.4四點量測法 404.5磁性量測系統(Magnetic Properties Measurement System) 424.6向量網路分析儀(Vector Network analyzer) 44第五章 實驗結果與數據分析 535.1介紹 535.2 樣品結構 535.3磁性量測 575.4電性量測 605.5室溫鐵磁共振量測 725.6變溫鐵磁共振量測 79第六章 結論 113參考資料 115附錄一YIG/Bi2Se3室溫鐵磁共振量測 119 zh_TW dc.format.extent 22064987 bytes - dc.format.mimetype application/pdf - dc.source.uri (資料來源) http://thesis.lib.nccu.edu.tw/record/#G0102755012 en_US dc.subject (關鍵詞) 鐵磁共振 zh_TW dc.subject (關鍵詞) 拓樸絕緣體 zh_TW dc.subject (關鍵詞) 碲化鉍 zh_TW dc.subject (關鍵詞) 自旋幫浦效應 zh_TW dc.subject (關鍵詞) 有效場 zh_TW dc.subject (關鍵詞) ferromagnetic resonance en_US dc.subject (關鍵詞) Topological Insulator en_US dc.subject (關鍵詞) Bi2Te3 en_US dc.subject (關鍵詞) spin pumping effect en_US dc.subject (關鍵詞) effective field en_US dc.title (題名) 鐵磁材料/拓樸絕緣體(鎳鐵合金/碲化鉍)雙層薄膜結構之自旋幫浦效應 zh_TW dc.title (題名) Spin-pumping Effect in Ferromagnet/Topological Insulator (NiFe/Bi2Te3) Bilayer structure en_US dc.type (資料類型) thesis en dc.relation.reference (參考文獻) [1] M.I. Dyakonov and V.I. Perel, Phys. Lett. A, 35: 459 (1971)[2] J. E. Hirsch, Phys. Rev. Lett, 83: 1834 (1999)[3] Shufeng Zhang, Phys. Rev. Lett, 85: 393 (2000)[4] Shuichi Murakami, Phys. Lett. B, 69: 241202 (2004)[5] Jairo Sinova, Dimitrie Culcer, Q. Niu, N. A. Sinitsyn, T. Jungwirth, and A. H. MacDonald, Phys. Rev. Lett, 92: 126603 (2004)[6] YK Kato, RC Myers, AC Gossard, and DD Awschalom, Science 306 (5703), 1910-1913 (2004)[7] J. Wunderlich, B. Kaestner, J. Sinova, and T. Jungwirth, Phys. Rev. Lett, 94: 047204 (2005)[8] S. O. Valenzuela, and M. Tinkham, Nature 442, 176-179 (2006)[9] Takeshi Seki, Yu Hasegawa, Seiji Mitani, Saburo Takahashi, Hiroshi Imamura, Sadamichi Maekawa, Junsaku Nitta, and Koki Takanashi, Nature Materials 7, 125 - 129 (2008)[10] T. Kimura, Y. Otani, T. Sato, S. Takahashi, and S. Maekawa, Phys. Rev. Lett, 98: 156601 (2007)[11] Sadamichi Maekawa, and Teruya Shinjo, Spin dependent transport in magnetic nanostructures. CRC Press[12] Arne Brataas, Andrew D. Kent, and Hideo Ohno, Nature Materials 11, 372–381 (2012)[13] Tomas Jungwirth, Jörg Wunderlich, and Kamil OlejníkNature, Nature Materials 11, 382–390 (2012)[14] C.L. Kane and E.J. Mele, Phys. Rev. Lett. 95, 226801 (2005).[15] Shuichi Murakami, Naoto Nagaosa, and Shou-Cheng Zhang, Science 301, 1348-1351 (2003)[16] D. Culcer, J. Sinova, N. A. Sinitsyn, T. Jungwirth, A. H.MacDonald, and Q. Niu, Phys. Rev. Lett. 93, 46602 (2004)[17] Axel Hoffmann, Electric Control and Detection of Spin Waves (http://online.kitp.ucsb.edu/online/spintronics_c13/hoffmann/pdf/Hoffmann_Spintronics13Conf_KITP.pdf)[18] E. Saitoh, M. Ueda, H. Miyajima, and G. Tatara, Appl. Phys. Lett. 88, 182509–182509 (2006)[19] A. H. Castro Neto, F. Guinea, N. M. R. Peres, K. S. Novoselov, and A. K. Geim, Rev. Mod. Phys. 81, 109 (2009) [20] Igor Žutić, Jaroslav Fabian, and S. Das Sarma, Rev. Mod. Phys. 76, 323(2004)[21] E. H. Hall, Philos. Mag. 10, 301 (1880); 12, 157 (1881)[22] E. H. Hall, Philos. Mag. 12, 157 (1881) [23] Yaroslav Tserkovnyak, Arne Brataas, and Gerrit E. W. Bauer, Phys. Rev. Lett. 88, 117601 (2002)[24] Igor Žutić, and Hanan DeryNature, Nature Materials 10, 647–648 (2011) [25] Bakun A. A. , Zakharchenya B. P. , Rogachev A. A. , Tkachuk M. N., and Fleisher V. G, Sov. Phys. JETP Lett. 40: 1293 (1984)[26] Jung-Chuan Lee, Leng-Wei Huang, Dung-Shing Hung, Tung-Han Chiang, J. C. A. Huang, Jun-Zhi Liang, and Shang-Fan Lee, Appl. Phys. Lett. 104, 209903 (2014)[27] Markus König, Steffen Wiedmann, Christoph Brüne, Andreas Roth, Hartmut Buhmann, Laurens W. Molenkamp, Xiao-Liang Qi, Shou-Cheng Zhang, Science 318 (5851): 766–770 (2007)[28] Y. Shiomi, K. Nomura, Y. Kajiwara, K. Eto, M. Novak, Kouji Segawa, Yoichi Ando, and E. Saitoh, Phys. Rev. Lett. 113, 196601 (2014)[29] HuJun Jiao and Gerrit E. W. Bauer, Phys. Rev. Lett. 110, 217602 (2013)[30] A. A. Baker, A. I. Figueroa, L. J. Collins-McIntyre, G. van der Laan, and T. Hesjedala, Sci. Rep. 5, 7907, Supplementary Information (2015)[31] Yokoyama, T., Zang, J. & Nagaosa, N. Theoretical study of the dynamics of magnetization on the topological surface. Phys. Rev. B 81, 241410 (2010).[32] Garate, I. & Franz, M. Inverse spin-galvanic effect in the interface between a topological insulator and a ferromagnet. Phys. Rev. Lett. 104, 146802 (2010).[33] Lee. H. W., K. C. Kim, and J. Lee, IEEE Trans. Magn., Vol. 42, No. 7, 1917-1925 (2006)[34] Condensed Matter Group:TutSputtering, http://www.stoner.leeds.ac.uk/Research/TutSputtering[35] 網路分析的基本概念, http://www.ni.com/white-paper/11640/zht/[36] Agilent Technologies, Understanding the Fundamental Principles of Vector Network Analysis. Agilent AN 1287-1, Application Note.[37] Hai-Zhou Lu, and Shun-Qing Shen, Proc. Of Spie. 9167, 91672E (2014)[38] Hong-Tao He, Gan Wang, Tao Zhang, Iam-Keong Sou, George K. L Wong, Jian-Nong Wang, Hai-Zhou Lu, Shun-Qing Shen, and Fu-Chun Zhang, Phys. Rev. Lett. 106, 166805 (2011)[39] Shao-Pin Chiu, and Juhn-Jong Lin, Phys. Rev. B 87, 035122 (2013)[40] Jianshi Tang, Li-Te Chang, Xufeng Kou, Koichi Murata, Eun Sang Choi, Murong Lang, Yabin Fan, Ying Jiang, Mohammad Montazeri, Wanjun Jiang, Yong Wang, Liang He, and Kang L. Wang, Nano Lett. 14, 5423−5429 (2014)[41] http://mathworld.wolfram.com/PolygammaFunction.html[42] http://www.originlab.com/doc/LabTalk/ref/Real-polygamma-func[43] L.M. Goncalves, C. Couto, P. Alpuim, A.G. Rolo, F. Völklein, J.H. Correia, Thin Solid FilmsVolume 518, Issue 10, Pages 2816–2821 (2010)[44] Faria Basheer Abdulahad, Dung-Shung Hung, Yu-Che Chiu, and Shang-Fan. Lee, IEEE Trans. Magn., VOL. 47, NO. 10(2011)[45] M. Jamali, J. S. Lee, Y. Lv, Z. Zhao, N. Samarth, and J. P. Wang, Room Temperature Spin Pumping in Topological Insulator Bi2Se3. arXiv:1407.7940 (2014)[46] CN Wu, YH Lin, YT Fanchiang, HY Hung, HY Lin, PH Lin, JG Lin, SF Lee, M Hong, and J Kwo, J. Appl. Phys. 117, 17D148 (2015) zh_TW
