| dc.contributor | 應物所 | |
| dc.creator (作者) | 陳洋元 | zh_TW |
| dc.creator (作者) | Chang, Chia-Hsiang | en_US |
| dc.creator (作者) | Chen, Cheng-Lung | en_US |
| dc.creator (作者) | Chiu, Wan-Ting | en_US |
| dc.creator (作者) | Chen, Yang-Yuan | en_US |
| dc.date (日期) | 2017-01 | |
| dc.date.accessioned | 21-Nov-2017 17:51:16 (UTC+8) | - |
| dc.date.available | 21-Nov-2017 17:51:16 (UTC+8) | - |
| dc.date.issued (上傳時間) | 21-Nov-2017 17:51:16 (UTC+8) | - |
| dc.identifier.uri (URI) | http://nccur.lib.nccu.edu.tw/handle/140.119/114850 | - |
| dc.description.abstract (摘要) | Ge doped Cu3SbSe4 semiconductors with Cu deficiencies were synthesized by melting and spark plasma sintering for the investigation of their thermoelectric transport properties. Ge atoms can successfully substitute Sb lattice sites, and result in lattice shrinkage with increasing Ge content. Doping with Ge not only improves the electrical conductivity but also optimizes the power factor of Cu2.95(Sb1−xGex)Se4. Ge doped specimens also reveal a competition between alloying effects and increased carrier thermal conductivity. The zT enhancement of Ge doped alloys is mainly ascribed to the enhanced power factor and the reduced lattice thermal conductivity. As a result, Cu2.95(Sb0.96Ge0.04)Se4 reaches a maximum zT of 0.7 at 640 K, showing an approximately 35% enhancement over the pristine Cu2.95SbSe4. | en_US |
| dc.format.extent | 130 bytes | - |
| dc.format.mimetype | text/html | - |
| dc.relation (關聯) | Materials Letters, Volume 186, Pages 227-230 | en_US |
| dc.subject (關鍵詞) | Thermoelectric materials; Semiconductors; Sintering; Phonon; Germanium doping | en_US |
| dc.title (題名) | Enhanced thermoelectric properties of Cu3SbSe4 by germanium doping | en_US |
| dc.type (資料類型) | article | |
| dc.identifier.doi (DOI) | 10.1016/j.matlet.2016.10.011 | |
| dc.doi.uri (DOI) | https://doi.org/10.1016/j.matlet.2016.10.011 | |
