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題名 Enhanced surface mobility and quantum oscillations in topological insulator Bi1.5Sb0.5Te1.7Se1.3 nanoflakes
作者 Hsiung, T.-C.;Chen, D.-Y.;Zhao, L.;Lin, Y.-H.;Mou, C.-Y.;Lee, T.-K.;Wu, M.-K.;Chen, Yang Yuan
陳洋元
貢獻者 應物所
關鍵詞 Anti-localization effects; Electrical conductance; Enhanced surface; Metallic surface; Quantum oscillations; Surface mobility; Thickness dependence; Topological insulators; Surface states; Electric insulators
日期 2013-10
上傳時間 26-May-2015 18:01:10 (UTC+8)
摘要 In this study, a series of Bi1.5Sb0.5Te 1.7Se1.3 (BSTS) flakes 80-nm to 140-μm in thickness was fabricated to investigate their metallic surface states. We report the observation of surface-dominated transport in these topological insulator BSTS nanoflakes. The achievement of surface-dominated transport can be attributed to high surface mobility (∼3000 cm2/V s) and low bulk mobility (12 cm2/V s). Up to 90% of the total conductance, the surface channel was estimated based on the thickness dependence of electrical conductance and the result of the Shubnikov-de Hass oscillations in a 200-nm BSTS. The nature of nontrivial Dirac surface states was also confirmed by the weak anti-localization effect. © 2013 AIP Publishing LLC.
關聯 Applied Physics Letters, 103(16), 論文編號 163111
資料類型 article
DOI http://dx.doi.org/10.1063/1.4826092
dc.contributor 應物所
dc.creator (作者) Hsiung, T.-C.;Chen, D.-Y.;Zhao, L.;Lin, Y.-H.;Mou, C.-Y.;Lee, T.-K.;Wu, M.-K.;Chen, Yang Yuan
dc.creator (作者) 陳洋元zh_TW
dc.date (日期) 2013-10
dc.date.accessioned 26-May-2015 18:01:10 (UTC+8)-
dc.date.available 26-May-2015 18:01:10 (UTC+8)-
dc.date.issued (上傳時間) 26-May-2015 18:01:10 (UTC+8)-
dc.identifier.uri (URI) http://nccur.lib.nccu.edu.tw/handle/140.119/75305-
dc.description.abstract (摘要) In this study, a series of Bi1.5Sb0.5Te 1.7Se1.3 (BSTS) flakes 80-nm to 140-μm in thickness was fabricated to investigate their metallic surface states. We report the observation of surface-dominated transport in these topological insulator BSTS nanoflakes. The achievement of surface-dominated transport can be attributed to high surface mobility (∼3000 cm2/V s) and low bulk mobility (12 cm2/V s). Up to 90% of the total conductance, the surface channel was estimated based on the thickness dependence of electrical conductance and the result of the Shubnikov-de Hass oscillations in a 200-nm BSTS. The nature of nontrivial Dirac surface states was also confirmed by the weak anti-localization effect. © 2013 AIP Publishing LLC.
dc.format.extent 932437 bytes-
dc.format.mimetype application/pdf-
dc.relation (關聯) Applied Physics Letters, 103(16), 論文編號 163111
dc.subject (關鍵詞) Anti-localization effects; Electrical conductance; Enhanced surface; Metallic surface; Quantum oscillations; Surface mobility; Thickness dependence; Topological insulators; Surface states; Electric insulators
dc.title (題名) Enhanced surface mobility and quantum oscillations in topological insulator Bi1.5Sb0.5Te1.7Se1.3 nanoflakes
dc.type (資料類型) articleen
dc.identifier.doi (DOI) 10.1063/1.4826092
dc.doi.uri (DOI) http://dx.doi.org/10.1063/1.4826092